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Samsung M393B5270CH0-CH904 4GB DDR3-1333MHz RDIMM 1Rx4 CL9 Memory
- Capacity: 4GB
- Memory Type: DDR3 SDRAM
- Form Factor: RDIMM
- Speed: 1333MHz
- Rank: 1Rx4
- CAS Latency: CL9
- ECC: Registered ECC
- Voltage: 1.5V
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Product Overview
This Samsung 4GB DDR3 RDIMM memory module operates at 1333MHz with a 1Rx4 rank configuration and CL9 latency. It is designed for server applications requiring reliable data integrity and efficient performance.
Technical Information
| Memory Size | 4GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM |
| Speed | 1333MHz |
Additional Specifications
| Rank | 1Rx4 |
| CAS Latency | CL9 |
| ECC | Registered ECC |
Product Description
The Samsung M393B5270CH0-CH904 is a 4GB DDR3 Registered DIMM (RDIMM) module, engineered for server and high-performance computing environments. It operates at a speed of 1333MHz, delivering efficient data transfer rates suitable for a wide range of applications. The 1Rx4 rank configuration signifies a single-rank module where each rank utilizes x4 data width. This configuration is often chosen for its balance of performance and power efficiency in certain server architectures. This RDIMM features Error-Correcting Code (ECC) memory, which is essential for maintaining data integrity and system stability in critical applications. ECC technology can detect and correct single-bit errors, preventing data corruption and minimizing the risk of system failures. The registered design includes a register chip that buffers command and address signals, reducing the electrical load on the memory controller. This feature is crucial for enabling higher memory capacities and ensuring stable operation in complex server systems. With a CAS Latency (CL) of 9, this module offers efficient data access times, contributing to overall system responsiveness. The DDR3 standard is a widely adopted memory technology, ensuring compatibility with a broad range of server motherboards. The M393B5270CH0-CH904 is a reliable memory solution for upgrading existing server memory or for building new systems that require robust, error-protected memory.
