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Samsung M386B8G70BO0-CK04 64GB DDR3-1600MHz LRDIMM 8Rx4 CL11 Memory
- 64GB DDR3 Memory
- Load-Reduced DIMM (LRDIMM)
- Speed: 1600MHz
- CAS Latency: CL11
- Configuration: 8Rx4 (Eight Rank x4)
- Designed for high-density server applications
- Supports higher memory capacities per channel
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Product Overview
The Samsung M386B8G70BO0-CK04 is a high-capacity 64GB DDR3 Load-Reduced DIMM (LRDIMM) memory module. It operates at 1600MHz with a CAS Latency of 11 and features an 8Rx4 configuration, designed for maximum memory density and performance in enterprise environments.
Technical Information
| Memory Type | DDR3 SDRAM |
| Capacity | 64GB |
| Form Factor | LRDIMM |
| Speed | 1600MHz |
Additional Specifications
| Latency | CL11 |
| Rank | 8Rx4 |
| Voltage | 1.5V (typical) |
Product Description
This Samsung M386B8G70BO0-CK04 module represents a significant advancement in server memory technology, offering a massive 64GB capacity. It utilizes DDR3 technology, providing a robust platform for memory-intensive applications such as large databases, virtualization, scientific computing, and data analytics. The 1600MHz speed ensures rapid data transfer rates, crucial for maintaining system responsiveness under heavy loads. The Load-Reduced DIMM (LRDIMM) architecture is key to achieving such high capacities. Unlike RDIMMs, LRDIMMs employ a memory buffer chip that isolates the memory controller from the memory chips. This significantly reduces the electrical load, allowing for more memory modules to be installed per channel and enabling higher overall system memory configurations. This makes LRDIMMs the preferred choice for servers requiring maximum memory footprint. The 8Rx4 configuration signifies eight ranks of memory chips, each with a 4-bit data width. This multi-rank design, combined with the LRDIMM architecture, maximizes the density and efficiency of the module. With a CAS Latency of CL11, this 64GB LRDIMM provides a powerful and scalable memory solution for the most demanding enterprise server environments.
