Samsung M386B8G70DE0-CH9 64GB DDR3-1333MHz LRDIMM 4Rx4 CL9 Memory

SKU M386B8G70DE0-CH9

Brand Samsung

Capacity: 64GB
Memory Type: DDR3 SDRAM
Speed: 1333MHz (PC3-10600)
Form Factor: LRDIMM (Load-Reduced DIMM)
Rank: 4Rx4 (Quad Rank, x4 data width)
Voltage: 1.35V (Low Voltage)
CAS Latency: CL9
Designed for high-capacity servers
Features advanced signal buffering for density

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Key specifications

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Capacity: 64GB
Memory Type: DDR3 SDRAM
Speed: 1333MHz
Module Type: LRDIMM
Voltage: 1.35V
CAS Latency: CL9

Product details

The Samsung M386B8G70DE0-CH9 is a 64GB DDR3 Load-Reduced DIMM (LRDIMM) operating at 1333MHz (PC3-10600). It is designed for high-capacity server applications requiring advanced memory features.

Technical Information

Capacity	64GB
Memory Type	DDR3 SDRAM
Speed	1333MHz
Module Type	LRDIMM

Additional Specifications

Voltage	1.35V
CAS Latency	CL9
Rank	4Rx4
Pin Count	240-Pin

Description

The Samsung M386B8G70DE0-CH9 is a high-density 64GB DDR3 Load-Reduced DIMM (LRDIMM) module, engineered for demanding server environments. It operates at a speed of 1333MHz, providing a PC3-10600 data transfer rate. LRDIMMs are specifically designed to overcome the limitations of traditional Registered DIMMs (RDIMMs) and Unbuffered DIMMs (UDIMMs) in terms of maximum memory capacity per channel. They achieve this by incorporating an additional buffer chip that isolates the memory chips from the memory controller, significantly reducing the electrical load and enabling the installation of much larger amounts of RAM. This module features a Quad Rank (4Rx4) configuration, which means it utilizes four ranks of memory chips, each with a data width of x4. This configuration, combined with the LRDIMM architecture, allows for extremely high capacities like 64GB on a single module. It operates at a low voltage of 1.35V (DDR3L), contributing to power efficiency and reduced heat output in dense server deployments. The CAS Latency (CL) is rated at 9, indicating the timing for data access. The M386B8G70DE0-CH9 is ideal for servers running memory-intensive applications such as large-scale virtualization, in-memory databases, high-performance computing, and big data analytics, where maximizing RAM capacity is crucial for performance. Its LRDIMM design ensures compatibility and stability even when populating servers with a large number of memory modules. It is essential to confirm that the target server platform supports DDR3 LRDIMMs and the specific voltage and rank configurations before installation.

Condition: Refurbished