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Samsung M386AAK40B40-CWD7Q 128GB DDR4-2666MHz LRDIMM 8Rx4 CL19 Memory
- Capacity: 128GB
- Type: DDR4 LRDIMM
- Speed: 2666MHz (PC4-21300)
- Rank: 8Rx4
- CAS Latency: CL19
- Voltage: 1.2V
- ECC: Registered (RDIMM)
- Designed for servers and high-performance workstations
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Product Overview
The Samsung M386AAK40B40-CWD7Q is a 128GB DDR4 Load-Reduced DIMM (LRDIMM) memory module. It operates at a speed of 2666MHz with timings of CL19 and features an 8Rx4 rank configuration.
Technical Information
| Capacity | 128GB |
| Memory Type | DDR4 SDRAM |
| Form Factor | LRDIMM |
| Speed | 2666MHz |
| Module Type | LRDIMM |
Additional Specifications
| Rank | 8Rx4 |
| CAS Latency | CL19 |
| Voltage | 1.2V |
| ECC | Registered |
| Manufacturer | Samsung |
Product Description
The Samsung M386AAK40B40-CWD7Q is a high-capacity 128GB DDR4 Load-Reduced Dual In-line Memory Module (LRDIMM). This module is engineered for enterprise-level servers and workstations that require significant memory bandwidth and capacity to handle demanding applications, large datasets, and virtualization. Operating at a speed of 2666MHz, this LRDIMM provides excellent performance for memory-intensive tasks. The 8Rx4 rank configuration indicates a high density and efficient use of memory channels. With a CAS Latency of CL19, it balances speed with stability, making it suitable for a wide range of server workloads. The LRDIMM design helps to reduce electrical loading on the memory controller, allowing for higher memory capacities and more DIMMs per channel. This memory module is designed to be compatible with systems supporting DDR4 LRDIMMs and is ideal for applications such as large-scale databases, high-performance computing (HPC), and extensive virtualization deployments. Its robust specifications ensure reliable operation and contribute to the overall performance and scalability of the server infrastructure.
