Safe Checkout
Secure Payments
Fast Delivery
Order Today
Free Shipping
Across the US
Easy Returns
Hassle-Free
Samsung M386ABG40M50-CYF 256GB DDR4-2933MHz LRDIMM 8Rx4 CL21 Memory
- Capacity: 256GB
- Type: DDR4 SDRAM
- Form Factor: LRDIMM (Load-Reduced DIMM)
- Speed: 2933MHz (PC4-23466)
- Latency: CL21
- Rank: 8Rx4 (8 Ranks, 4 data bits per rank)
- Voltage: 1.2V
- ECC: Yes (Error-Correcting Code)
- Designed for servers and high-performance workstations
Click on Inquire to get latest price
Free U.S. Ground Shipping
Typically 1-2 handling + 3-7 transit days
Purchase orders accepted
For government, enterprise, data center, and small business customers.
Bulk Purchase Inquiry
Volume pricing and availability
Product Overview
The Samsung M386ABG40M50-CYF is a high-capacity 256GB LRDIMM (Load-Reduced Dual In-line Memory Module) designed for servers and workstations. It operates at DDR4 speeds of 2933MHz with a CL21 latency, offering significant memory bandwidth and capacity for demanding enterprise applications.
Technical Information
| Product Type | Memory Module |
| Brand | Samsung |
| SKU | M386ABG40M50-CYF |
| Capacity | 256GB |
| Memory Type | DDR4 SDRAM |
Additional Specifications
| Form Factor | LRDIMM |
| Speed | 2933MHz |
| Latency | CL21 |
| Rank | 8Rx4 |
Product Description
The Samsung M386ABG40M50-CYF is a high-performance memory module engineered for enterprise-grade computing environments that demand substantial memory capacity and bandwidth. As a 256GB LRDIMM, it incorporates advanced features to support higher memory densities and improved signal integrity compared to standard RDIMMs, making it ideal for memory-intensive applications such as large databases, virtualization, and in-memory analytics. The module operates at a DDR4 speed of 2933MHz, providing rapid data access and significantly boosting application performance. The CL21 CAS latency indicates the number of clock cycles required to access data, offering a balance between speed and stability. The 8Rx4 configuration signifies an eight-rank design with four data bits per rank, allowing for maximum utilization of the memory controller's capabilities and enabling higher module capacities. Furthermore, this LRDIMM features Error-Correcting Code (ECC) functionality, which detects and corrects single-bit memory errors, enhancing system reliability and data integrity – a critical requirement for servers. The load-reduced architecture also helps to reduce the electrical load on the memory controller, enabling systems to support more memory modules and achieve higher total memory capacities. This module is a key component for building powerful and stable server systems.
