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Samsung M386A8K40CM2-CVFB0 64GB DDR4-2933MHz LRDIMM 4Rx4 CL21 Memory
- Capacity: 64GB
- Memory Type: DDR4
- Speed: 2933MHz (PC4-23466)
- Latency: CL21
- Form Factor: LRDIMM (Load-Reduced DIMM)
- Voltage: 1.2V
- ECC: ECC (Error-Correcting Code)
- Rank: 4Rx4 (Quad Rank x4)
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Product Overview
The Samsung M386A8K40CM2-CVFB0 is a high-capacity 64GB DDR4 Load-Reduced DIMM (LRDIMM) memory module. It operates at 2933MHz with a CL21 latency, designed for servers and high-end workstations requiring maximum memory capacity and performance.
Technical Information
| Product Type | Memory Module |
| Capacity | 64GB |
| Memory Technology | DDR4 SDRAM |
| Form Factor | LRDIMM |
| Speed | 2933MHz |
Additional Specifications
| CAS Latency | CL21 |
| Voltage | 1.2V |
| Rank | 4Rx4 |
| ECC | Yes |
Product Description
The Samsung M386A8K40CM2-CVFB0 is a substantial 64GB DDR4 Load-Reduced DIMM (LRDIMM) module, engineered for server and high-performance computing environments where maximum memory capacity and reliability are critical. LRDIMMs utilize a memory buffer chip that reduces the electrical load on the memory controller, allowing for higher memory capacities and potentially higher speeds compared to standard UDIMMs or RDIMMs, especially in systems with many memory modules installed. This module operates at a speed of 2933MHz, corresponding to a PC4-23466 data transfer rate. It features a CAS Latency (CL) of 21, which is relatively low for its speed and capacity, contributing to efficient data access. The LRDIMM architecture is particularly beneficial for servers running memory-intensive applications such as large databases, virtualization platforms, and scientific simulations, where large amounts of RAM are essential for optimal performance. As an ECC (Error-Correcting Code) memory module, the M386A8K40CM2-CVFB0 includes hardware capabilities to detect and correct common types of internal data corruption, significantly enhancing system stability and data integrity, which is a standard requirement for server-grade hardware. The module is organized as Quad Rank x4 (4Rx4), offering a high degree of parallelism for memory access. With a standard operating voltage of 1.2V, it aligns with DDR4 power efficiency standards.

