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Samsung M386A8K40CM2-CTD7Y 64GB DDR4-2666MHz LRDIMM 4Rx4 CL19 Memory
- Capacity: 64GB
- Type: DDR4 LRDIMM
- Speed: 2666MHz
- Rank Configuration: 4Rx4
- Latency: CL19
- ECC (Error-Correcting Code) support
- Designed for server and workstation applications
- High reliability and performance
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Product Overview
The Samsung M386A8K40CM2-CTD7Y is a 64GB DDR4 LRDIMM memory module. It operates at a speed of 2666MHz with a 4Rx4 rank configuration and CL19 latency. This module is designed for servers and high-performance workstations requiring large amounts of reliable memory.
Technical Information
| Capacity | 64GB |
| Memory Type | DDR4 LRDIMM |
| Speed | 2666MHz |
Additional Specifications
| Rank | 4Rx4 |
| CAS Latency | CL19 |
| ECC | Yes |
Product Description
The Samsung M386A8K40CM2-CTD7Y is a high-capacity 64GB Load-Reduced Dual In-line Memory Module (LRDIMM) engineered for demanding server and workstation environments. It utilizes DDR4 technology, offering significant improvements in speed, power efficiency, and density over previous generations. The module operates at a clock speed of 2666MHz, providing ample bandwidth for data-intensive applications and multitasking. The 4Rx4 rank configuration indicates that the memory chip is organized into four banks, each with an x4 data width. This organization allows for increased memory density and can improve performance by enabling more simultaneous memory accesses. As an LRDIMM, it incorporates a memory buffer chip that reduces electrical loading on the memory controller, enabling higher memory capacities and speeds to be achieved in systems with many memory modules. With a CAS Latency (CL) of 19, this module strikes a balance between speed and stability. The inclusion of Error-Correcting Code (ECC) is critical for server-grade memory, as it detects and corrects single-bit errors, preventing data corruption and system crashes. This makes the M386A8K40CM2-CTD7Y a reliable choice for mission-critical applications, virtualization, large databases, and high-performance computing where memory integrity is paramount.



