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Samsung M386A8K40BM2-CTD6Q 64GB DDR4-2666MHz LRDIMM 4Rx4 CL19 Memory
- Capacity: 64GB
- Type: DDR4 LRDIMM (Load-Reduced DIMM)
- Speed: 2666MHz (PC4-21300)
- Rank: 4Rx4 (Quad Rank x4)
- Latency: CL19
- Voltage: 1.2V
- ECC: Yes (Error-Correcting Code)
- Form Factor: 288-pin DIMM
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Product Overview
The Samsung M386A8K40BM2-CTD6Q is a high-performance 64GB LRDIMM memory module designed for server and workstation environments. It operates at DDR4-2666MHz speed with a CL19 latency, offering robust data integrity and reliability for demanding applications.
Technical Information
| Memory Type | DDR4 SDRAM |
| Form Factor | LRDIMM |
| Capacity | 64GB |
| Speed | 2666MHz |
Additional Specifications
| CAS Latency | CL19 |
| Rank | 4Rx4 |
| Voltage | 1.2V |
| ECC | Registered ECC |
Product Description
This 64GB DDR4 LRDIMM module from Samsung is engineered for enterprise-grade computing, providing substantial memory capacity and high bandwidth crucial for virtualization, large databases, and complex scientific simulations. The LRDIMM architecture reduces electrical loading on the memory controller, allowing for higher densities and improved system stability, especially in multi-processor configurations. Featuring a 4Rx4 rank configuration, this module offers enhanced performance by distributing data across multiple ranks, leading to faster data access times. The DDR4-2666MHz speed ensures efficient data transfer rates, complementing the capabilities of modern server CPUs. Its CL19 latency, while standard for this speed, is optimized within Samsung's rigorous manufacturing process for reliable operation. Designed for compatibility with a wide range of server platforms that support DDR4 LRDIMM memory, the M386A8K40BM2-CTD6Q is an ideal upgrade for systems requiring increased memory capacity and performance. Its robust design and Samsung's reputation for quality make it a dependable choice for mission-critical applications where uptime and data integrity are paramount.
