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Samsung M386A8K40BM2-CTD60 64GB DDR4-2666MHz LRDIMM 4Rx4 CL19 Memory
- Capacity: 64GB
- Type: DDR4 LRDIMM
- Speed: 2666MHz (PC4-21300)
- Rank: 4Rx4 (Quad Rank x4)
- Latency: CL19
- Voltage: 1.2V
- ECC: Registered ECC
- Form Factor: 288-pin DIMM
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Key specifications
See full specs ↓- Memory Type
- DDR4 SDRAM
- Form Factor
- LRDIMM
- Capacity
- 64GB
- Speed
- 2666MHz
- CAS Latency
- CL19
- Rank
- 4Rx4
Product details
The Samsung M386A8K40BM2-CTD60 is a 64GB DDR4 LRDIMM memory module operating at 2666MHz with CL19 latency. It is designed for high-density server applications requiring reliable and high-performance memory.
Technical Information
| Memory Type | DDR4 SDRAM |
| Form Factor | LRDIMM |
| Capacity | 64GB |
| Speed | 2666MHz |
Additional Specifications
| CAS Latency | CL19 |
| Rank | 4Rx4 |
| Voltage | 1.2V |
| ECC | Registered ECC |
Description
This Samsung M386A8K40BM2-CTD60 module is a 64GB Load-Reduced Dual In-line Memory Module (LRDIMM) that operates at DDR4 speeds of 2666MHz. LRDIMMs are designed to reduce the electrical load on the memory controller, enabling higher memory capacities and improved system stability in servers and workstations with multiple memory channels or processors. The module features a 4Rx4 rank configuration, indicating it is a quad-rank module with each rank composed of x4 DRAM devices. This configuration can enhance performance by allowing the memory controller to access data from multiple ranks concurrently. The CL19 latency is a measure of the delay between requesting data and receiving it, which is standard for DDR4-2666MHz modules. With its substantial 64GB capacity and enterprise-grade specifications, the M386A8K40BM2-CTD60 is well-suited for memory-intensive applications such as large-scale virtualization, in-memory databases, high-performance computing, and complex data analysis. Samsung's commitment to quality ensures this memory module provides reliable performance and data integrity for critical server environments.
Condition: Refurbished
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