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Samsung M386A8K40BM1-CPB4Q 64GB DDR4-2133MHz LRDIMM 4Rx4 CL15 Memory
- 64GB capacity
- DDR4 SDRAM
- Speed: 2133MHz (PC4-17000)
- Latency: CL15
- Type: LRDIMM (Load-Reduced DIMM)
- Configuration: 4Rx4 (Quad Rank, x4 data width)
- Voltage: 1.2V
- ECC (Error-Correcting Code) support
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Product Overview
The Samsung M386A8K40BM1-CPB4Q is a high-capacity 64GB DDR4 LRDIMM memory module. It operates at 2133MHz with CL15 latency, designed for servers and workstations requiring significant memory resources.
Technical Information
| Capacity | 64GB |
| Memory Type | DDR4 SDRAM |
| Speed | 2133MHz |
| Form Factor | LRDIMM |
Additional Specifications
| Rank | 4Rx4 |
| CAS Latency | CL15 |
| Voltage | 1.2V |
Product Description
The Samsung M386A8K40BM1-CPB4Q is a high-performance 64GB DDR4 Load-Reduced Dual In-line Memory Module (LRDIMM). This module is engineered for server and workstation environments that demand substantial memory capacity and reliability. With a capacity of 64GB, it is ideal for memory-intensive applications such as large-scale virtualization, in-memory databases, high-performance computing, and complex data analytics. Operating at a speed of 2133MHz (PC4-17000), this DDR4 LRDIMM provides excellent bandwidth for data-intensive tasks. The CAS Latency (CL) of 15 contributes to efficient data access. As an LRDIMM, it incorporates a memory buffer chip that reduces the electrical load on the memory controller, allowing for higher memory capacities and more memory modules to be populated per channel, which is crucial for dense server configurations. The 4Rx4 organization signifies that the module is Quad Rank with a x4 data width, offering a high degree of parallelism. It also features ECC (Error-Correcting Code) functionality, which detects and corrects single-bit memory errors, enhancing system stability and data integrity. This makes the Samsung M386A8K40BM1-CPB4Q a robust and dependable choice for mission-critical enterprise applications where uptime and data accuracy are paramount.
