
Safe Checkout
Secure Payments
Fast Delivery
Order Today
Free Shipping
Across the US
Easy Returns
Hassle-Free
Samsung M386A8K40BM1-CPB0Q 64GB DDR4-2133MHz LRDIMM 4Rx4 CL15 Memory
- 64GB DDR4 LRDIMM memory module
- Speed: 2133MHz (PC4-17000)
- CAS Latency: CL15
- Rank: 4Rx4 (Quad Rank, x4 organization)
- Voltage: 1.2V
- Designed for servers and high-performance workstations
- Supports higher memory capacities and improved signal integrity
Free U.S. Ground Shipping
Typically 1-2 handling + 3-7 transit days
Purchase orders accepted
For government, enterprise, data center, and small business customers.
Bulk Purchase Inquiry
Volume pricing and availability
Product Overview
The Samsung M386A8K40BM1-CPB0Q is a high-capacity 64GB DDR4 Load-Reduced DIMM (LRDIMM) memory module. Operating at 2133MHz with a CL15 latency, it is designed for servers and workstations requiring significant memory resources and enhanced stability for demanding applications.
Technical Information
| Capacity | 64GB |
| Type | DDR4 LRDIMM |
| Speed | 2133MHz |
| Part Number | M386A8K40BM1-CPB0Q |
Additional Specifications
| CAS Latency | CL15 |
| Rank | 4Rx4 |
| Voltage | 1.2V |
Product Description
The Samsung M386A8K40BM1-CPB0Q is a high-performance 64GB DDR4 Load-Reduced Dual In-line Memory Module (LRDIMM). This module is engineered for server and workstation environments that require substantial memory capacity and enhanced signal integrity. Operating at a speed of 2133MHz, it provides a significant bandwidth for data-intensive applications, while its CAS Latency of CL15 ensures efficient data retrieval. As an LRDIMM, this module incorporates a memory buffer chip that reduces the electrical load on the memory controller. This feature allows for higher memory densities and more memory modules to be installed per channel, making it ideal for systems that need to scale to very large memory configurations. The 4Rx4 organization (Quad Rank, x4 data width) further contributes to its high capacity and performance characteristics, enabling efficient utilization of the memory bus. This Samsung memory module is built with high-quality components to ensure reliability and stability in demanding enterprise applications such as large-scale virtualization, database management, scientific computing, and complex data analytics. Its 1.2V operating voltage aligns with the DDR4 standard, promoting power efficiency within server systems. The M386A8K40BM1-CPB0Q is a crucial component for maximizing the memory potential of compatible server platforms.



