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Samsung M312L3310ETS-CA2 256MB DDR-266MHz RDIMM 1Rx4 CL2.5 Memory
- Capacity: 256MB
- Type: DDR SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 266MHz (PC2100)
- CAS Latency: CL2.5
- Rank: 1Rx4 (Single Rank x4)
- Voltage: Standard DDR voltage (typically 2.5V)
- ECC: Registered (implies ECC support for the system)
- Designed for older servers and workstations
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Product Overview
The Samsung M312L3310ETS-CA2 is a 256MB DDR-266MHz Registered DIMM (RDIMM) memory module. It features a 1Rx4 configuration and a CAS Latency of CL2.5, designed for older server and workstation systems.
Technical Information
| Capacity | 256MB |
| Memory Type | DDR SDRAM |
| Form Factor | RDIMM |
| Speed | 266MHz |
Additional Specifications
| CAS Latency | CL2.5 |
| Rank | 1Rx4 |
| Brand | Samsung |
| Part Number | M312L3310ETS-CA2 |
Product Description
The Samsung M312L3310ETS-CA2 is a 256MB DDR SDRAM Registered DIMM (RDIMM) memory module, operating at a speed of 266MHz. This module is designed for server and workstation platforms that utilize DDR memory technology and require registered modules for enhanced stability and capacity support. The PC2100 designation indicates its bandwidth capability. This RDIMM features a 1Rx4 configuration, meaning it is a single-rank module with four memory chips per rank. This configuration is common for DDR memory and affects how the memory controller addresses the module. The CAS Latency (CL) is rated at 2.5, which is a measure of the delay between the memory controller requesting data and the data being available. As a Registered DIMM, this module includes onboard registers that buffer command and address signals, reducing the electrical load on the memory controller. This allows systems to support more memory modules and larger total memory capacities. The M312L3310ETS-CA2 is suitable for upgrading or populating memory in compatible older server systems where DDR memory is specified.
