Samsung M312L28ET0-CA2 1GB DDR-266MHz RDIMM 1Rx4 CL2.5 Memory

SKU M312L28ET0-CA2

Brand Samsung

Capacity: 1GB
Type: DDR SDRAM
Speed: 266MHz
Form Factor: RDIMM (Registered DIMM)
Rank: 1Rx4
Latency: CL2.5
Brand: Samsung

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Key specifications

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Capacity: 1GB
Memory Type: DDR SDRAM
Speed: 266MHz
Form Factor: RDIMM
Rank: 1Rx4
Latency: CL2.5

Product details

This is a 1GB DDR memory module from Samsung, specifically an RDIMM (Registered DIMM) operating at 266MHz. It features a 1Rx4 rank configuration and CL2.5 latency, designed for server and workstation environments requiring ECC memory.

Technical Information

Capacity	1GB
Memory Type	DDR SDRAM
Speed	266MHz

Additional Specifications

Form Factor	RDIMM
Rank	1Rx4
Latency	CL2.5

Description

The Samsung M312L28ET0-CA2 is a 1GB Registered DIMM (RDIMM) memory module, engineered for enhanced stability and performance in server and high-end workstation applications. Registered DIMMs buffer command and address signals, reducing electrical load on the memory controller and allowing for more memory modules to be installed. Operating at DDR 266MHz, this module provides a solid foundation for systems requiring reliable memory performance. The 1Rx4 rank configuration indicates a single rank with four data bits per chip, which can influence performance characteristics in certain memory architectures. With a CAS Latency (CL) of 2.5, it offers a specific timing parameter crucial for system compatibility and stability. This memory module is designed to support Error-Correcting Code (ECC) functionality, which detects and corrects single-bit memory errors, thereby improving system reliability and data integrity. It is an ideal component for mission-critical systems where uptime and data accuracy are paramount.

Condition: Refurbished