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Micron MTC10F108YS1RC56BB1 24GB PC5-44800 DDR5-5600MHz CL46 Memory
- 24GB memory capacity
- DDR5 SDRAM technology
- Speed: PC5-44800 (5600MHz)
- CAS Latency: CL46
- ECC: Yes (implied by RC suffix, common for server/workstation)
- Form Factor: RDIMM (likely, common for server/workstation)
- Designed for servers and high-end workstations
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Product Overview
The Micron MTC10F108YS1RC56BB1 is a 24GB DDR5 memory module operating at 5600MHz with a CL46 latency. It is designed for high-performance computing environments requiring the latest memory technology for increased bandwidth and efficiency.
Technical Information
| Capacity | 24GB |
| Type | DDR5 SDRAM |
| Speed | 5600MHz |
Additional Specifications
| Module Type | RDIMM (likely) |
| Latency | CL46 |
| Part Number | MTC10F108YS1RC56BB1 |
Product Description
The Micron MTC10F108YS1RC56BB1 is a high-performance memory module built on the DDR5 standard, offering significant advancements over previous generations. With a substantial 24GB capacity, this module is designed to meet the memory demands of modern, data-intensive applications found in servers, workstations, and high-performance computing clusters. The DDR5 technology provides increased bandwidth, improved power efficiency, and enhanced signal integrity, enabling faster data processing and overall system responsiveness. Operating at a speed of 5600MHz (classified as PC5-44800), this memory module delivers rapid data transfer rates, which is crucial for tasks such as large-scale data analysis, complex simulations, video editing, and running multiple virtual machines. The CAS Latency (CL) of 46 indicates the number of clock cycles required to access data, and while higher than some DDR4 modules, it is balanced by the significantly increased clock speeds and architectural improvements of DDR5, resulting in superior real-world performance. The 'RC' in the part number often signifies ECC (Error-Correcting Code) functionality, which is vital for maintaining data integrity in critical server and workstation environments by detecting and correcting memory errors. Furthermore, the '108YS' and the general context suggest this is likely a Registered DIMM (RDIMM), which includes a register chip to reduce electrical load on the memory controller, allowing for higher densities and more modules per channel. This combination of capacity, speed, and error correction makes the MTC10F108YS1RC56BB1 a robust choice for demanding computing tasks.
