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Micron MTC10F108YS1RC56B 24GB DDR5-5600MHz RDIMM 1Rx8 CL46 Memory
- 24GB DDR5 SDRAM Memory
- Speed: 5600MHz
- Form Factor: RDIMM (Registered DIMM)
- Rank: 1Rx8 (Single Rank x8)
- CAS Latency: CL46
- Voltage: 1.1V
- ECC: Yes (Error-Correcting Code)
- High-speed enterprise memory
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Key specifications
See full specs ↓- Memory Capacity
- 24GB
- Memory Type
- DDR5 SDRAM
- Memory Speed
- 5600MHz
- Form Factor
- RDIMM
- Rank
- 1Rx8
- CAS Latency
- CL46
Product details
This Micron 24GB DDR5-5600MHz RDIMM memory module is engineered for high-performance computing and enterprise servers. It offers a significant leap in speed and efficiency with DDR5 technology, featuring a single-rank x8 configuration and CL46 latency.
Technical Information
| Memory Capacity | 24GB |
| Memory Type | DDR5 SDRAM |
| Memory Speed | 5600MHz |
| Form Factor | RDIMM |
Additional Specifications
| Rank | 1Rx8 |
| CAS Latency | CL46 |
| ECC | Yes |
| Voltage | 1.1V |
Description
The Micron MTC10F108YS1RC56B is a high-capacity 24GB DDR5 Registered DIMM (RDIMM) module, built to deliver exceptional performance and efficiency for demanding server and workstation applications. Leveraging the advanced capabilities of DDR5 technology, this module operates at a blazing fast 5600MHz, providing significantly increased bandwidth and reduced latency compared to previous generations. This makes it ideal for data-intensive tasks such as artificial intelligence, machine learning, high-performance computing (HPC), and large-scale data analytics. The 1Rx8 configuration denotes a single-rank design with eight data bits per chip. This configuration is optimized for high-speed operation and can offer advantages in memory controller efficiency. The CL46 CAS Latency is a characteristic of DDR5's architecture, where higher clock speeds are balanced with latency timings to achieve superior overall performance. Micron's implementation ensures robust operation and data integrity. As an RDIMM, this module includes an onboard register that buffers command and address signals, reducing the electrical load on the memory controller and enabling higher memory densities and system stability. It also incorporates on-die ECC for enhanced signal integrity at the chip level, complementing system-level ECC for comprehensive data protection. The MTC10F108YS1RC56B is a key component for building next-generation servers that require maximum memory bandwidth, capacity, and reliability.
Condition: Refurbished
Free U.S. ground shipping
Typically 1–2 days handling, 3–7 days in transit.
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Government, enterprise, data center and small business.
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