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Micron MTA72ASS8G72LZ-2G6B2 64GB DDR4-2666MHz LRDIMM 4Rx4 CL19 Memory
- Capacity: 64GB
- Memory Type: DDR4 SDRAM
- Form Factor: LRDIMM (Load-Reduced DIMM)
- Speed: 2666MHz (PC4-21300)
- Rank: 4Rx4 (Quad Rank x4)
- CAS Latency: CL19
- Voltage: 1.2V
- ECC: Yes (Error-Correcting Code)
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Product Overview
The Micron MTA72ASS8G72LZ-2G6B2 is a 64GB DDR4 Load-Reduced DIMM (LRDIMM) memory module, identical in core specifications to the MTA72ASS8G72LZ-2G6 but potentially indicating a specific revision or manufacturing batch. It operates at 2666MHz with a CL19 latency, providing high capacity and performance for servers.
Technical Information
| Capacity | 64GB |
| Memory Type | DDR4 SDRAM |
| Form Factor | LRDIMM |
| Speed | 2666MHz |
Additional Specifications
| Rank | 4Rx4 |
| CAS Latency | CL19 |
| Voltage | 1.2V |
| ECC | Yes |
Product Description
This Micron MTA72ASS8G72LZ-2G6B2 module represents a 64GB DDR4 LRDIMM, designed for advanced server and workstation platforms requiring significant memory resources. The LRDIMM design is crucial for enabling higher memory densities and maintaining signal integrity, which is paramount in systems supporting extensive virtualization, large-scale data analytics, or complex scientific simulations. The module's 4Rx4 configuration signifies a quad-rank design with x4 data width per rank, optimizing performance through enhanced rank interleaving capabilities. It operates at a DDR4-2666MHz frequency, delivering high throughput essential for data-intensive operations. The CAS latency of CL19 is a standard specification for this class of memory, balancing responsiveness with stability. As an ECC memory module, the MTA72ASS8G72LZ-2G6B2 provides critical data integrity features by detecting and correcting memory errors. This makes it a reliable choice for enterprise environments where uptime and data accuracy are non-negotiable. The 'B2' suffix likely denotes a specific manufacturing revision or feature set within Micron's product line for this memory module.
