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Micron MTA72ASS8G72LZ-2G6 64GB DDR4-2666MHz LRDIMM 4Rx4 CL19 Memory
- Capacity: 64GB
- Memory Type: DDR4 SDRAM
- Form Factor: LRDIMM (Load-Reduced DIMM)
- Speed: 2666MHz (PC4-21300)
- Rank: 4Rx4 (Quad Rank x4)
- CAS Latency: CL19
- Voltage: 1.2V
- ECC: Yes (Error-Correcting Code)
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Product Overview
The Micron MTA72ASS8G72LZ-2G6 is a 64GB DDR4 Load-Reduced DIMM (LRDIMM) memory module designed for high-performance server and workstation environments. It operates at a speed of 2666MHz with a CAS latency of CL19, offering substantial memory capacity and bandwidth for demanding applications.
Technical Information
| Capacity | 64GB |
| Memory Type | DDR4 SDRAM |
| Form Factor | LRDIMM |
| Speed | 2666MHz |
Additional Specifications
| Rank | 4Rx4 |
| CAS Latency | CL19 |
| Voltage | 1.2V |
| ECC | Yes |
Product Description
This Micron MTA72ASS8G72LZ-2G6 module is engineered to provide robust memory solutions for enterprise-grade systems. Its LRDIMM architecture allows for higher memory capacities and improved signal integrity compared to traditional RDIMMs, making it ideal for memory-intensive workloads such as large databases, virtualization, and high-performance computing. The module features a 4Rx4 configuration, indicating four ranks of memory chips, each with an x4 data width. This design contributes to increased bandwidth and performance, especially in systems that can leverage the additional rank interleaving. The 2666MHz operating frequency ensures rapid data transfer rates, while the CL19 latency strikes a balance between speed and stability for demanding server operations. With 64GB of capacity, this DDR4 memory is a critical component for scaling server performance and efficiency. It supports Error-Correcting Code (ECC) functionality, which is essential for detecting and correcting single-bit memory errors, thereby enhancing system reliability and data integrity in mission-critical environments.
