Micron MT9HTF6472FY-667A2N1 512MB DDR2-667MHz FB-DIMM 1Rx8 CL5 Memory

Description

The Micron MT9HTF6472FY-667A2N1 is a 512MB Fully Buffered DIMM (FB-DIMM) memory module, specifically engineered for high-performance server and workstation applications that demand significant memory bandwidth and capacity. Operating at DDR2-667MHz speeds, which corresponds to a PC2-5300 rating, this module provides efficient data transfer rates suitable for demanding enterprise workloads. The FB-DIMM architecture utilizes an Advanced Memory Buffer (AMB) chip on each module, which serializes data traffic between the memory controller and the DRAM chips. This design effectively eliminates the electrical loading issues inherent in traditional DDR2 DIMMs, enabling denser memory configurations and higher overall system memory capacity. This particular module features a 1Rx8 rank configuration, meaning it consists of one rank of DRAM chips, with each chip having eight data lines. This configuration is common for modules of this capacity and speed. The CAS Latency (CL) is set at 5, indicating the number of clock cycles required to access a specific column of data after a command is issued. The combination of DDR2 technology, 667MHz speed, and CL5 latency provides a solid foundation for reliable memory performance in server environments. Micron is a globally recognized leader in memory manufacturing, known for its commitment to quality and reliability. The MT9HTF6472FY-667A2N1 adheres to these high standards, ensuring that it performs consistently under demanding conditions. This 512MB FB-DIMM is an essential component for servers and workstations that require robust memory solutions to handle complex tasks, virtualization, and large datasets, contributing to overall system stability and efficiency.

Condition: Refurbished