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Micron MT9HTF6472FY-667AZI2 512MB DDR2-667MHz FB-DIMM 1Rx8 CL5 Memory

Micron MT9HTF6472FY-667AZI2 512MB DDR2-667MHz FB-DIMM 1Rx8 CL5 Memory

SKU:MT9HTF6472FY-667AZI2
  • 512MB Module Capacity
  • DDR2 SDRAM Technology
  • 667MHz Memory Speed
  • FB-DIMM (Fully Buffered DIMM) form factor
  • 1Rx8 Memory Organization
  • CL5 CAS Latency
  • Designed for server applications
  • ECC (Error-Correcting Code) support
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Product Overview

This Micron 512MB DDR2 FB-DIMM is a memory module designed for servers and workstations. It operates at 667MHz with a CL5 latency, providing essential memory capacity for system operations.

Technical Information

BrandMicron
Part NumberMT9HTF6472FY-667AZI2
Capacity512MB
Memory TypeDDR2

Additional Specifications

Speed667MHz
Form FactorFB-DIMM
Rank1Rx8
LatencyCL5

Product Description

The Micron MT9HTF6472FY-667AZI2 is a 512MB DDR2 Fully Buffered DIMM (FB-DIMM) memory module. FB-DIMMs were a server-specific memory technology that introduced an Advanced Memory Buffer (AMB) chip on the module itself. This buffer chip managed the data flow between the memory controller and the DRAM chips, allowing for higher memory densities and speeds than traditional DDR2 unbuffered DIMMs, albeit at the cost of increased latency and power consumption. This particular module operates at a frequency of 667MHz (PC2-5300) and features a CAS Latency (CL) of 5. The 1Rx8 organization indicates a single rank with eight DRAM chips per rank. As an FB-DIMM, it is designed for use in server platforms that specifically support this type of memory, often found in systems from the DDR2 era that required high memory capacities and reliability. With 512MB of capacity, this module would have been used to supplement the memory in servers for tasks such as running operating systems, virtualization environments, or database applications. The inclusion of ECC (Error-Correcting Code) functionality is standard for server memory, providing enhanced data integrity by detecting and correcting single-bit errors.

Condition:Refurbished

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