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Micron MT36RTF51272FZ-667HZD6ES 4GB DDR2-667MHz FB-DIMM 2Rx4 Memory
- Capacity: 4GB.
- Type: DDR2 SDRAM.
- Form Factor: FB-DIMM (Fully Buffered DIMM).
- Speed: 667MHz (PC2-5300).
- CAS Latency: CL5.
- Configuration: 2Rx4 (Dual Rank, x4 data width).
- Designed for server and workstation environments.
- Features an integrated Advanced Memory Buffer (AMB).
- ES suffix may indicate Engineering Sample or specific qualification.
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Product Overview
The Micron MT36RTF51272FZ-667HZD6ES is a 4GB DDR2 Fully Buffered DIMM (FB-DIMM) memory module. It operates at 667MHz with a CL5 latency, designed for servers and high-end workstations requiring high memory bandwidth and capacity.
Technical Information
| Memory Capacity | 4GB |
| Memory Type | DDR2 SDRAM |
| Form Factor | FB-DIMM |
| Speed | 667MHz |
Additional Specifications
| Module Type | PC2-5300F |
| CAS Latency | CL5 |
| Rank | 2Rx4 |
| Voltage | 1.8V |
Product Description
The Micron MT36RTF51272FZ-667HZD6ES is a 4GB DDR2 Fully Buffered DIMM (FB-DIMM) memory module, identical in core specifications to the MT36RTF51272FZ-667H1D6, operating at 667MHz with CL5 latency and a 2Rx4 configuration. This module is engineered for server and high-performance computing environments that demand high memory capacity and bandwidth. The FB-DIMM architecture, featuring an Advanced Memory Buffer (AMB), allows for greater scalability and improved signal integrity on the memory bus, enabling systems to support larger memory footprints and higher frequencies. The 'ES' suffix in the part number often denotes an Engineering Sample, which might indicate it was used for testing or validation purposes. While functionally similar to production modules, engineering samples may sometimes have different qualification statuses or support levels. However, for core performance metrics like speed, capacity, and latency, this module functions as a standard 4GB DDR2-667 FB-DIMM. This memory module is suitable for servers and workstations equipped with FB-DIMM compatible motherboards. Its 667MHz speed and CL5 latency provide a solid foundation for memory-intensive applications, including virtualization, large-scale data processing, and scientific computing. The dual-rank, x4 DRAM configuration further enhances its suitability for demanding enterprise workloads where memory performance and density are paramount.
