Micron MT36RTF51272FY-667GZN8ES 4GB DDR2-667MHz FB-DIMM 2Rx4 Memory

Product Description

This Micron memory module, identified by the part number MT36RTF51272FY-667GZN8ES, is a 4GB DDR2 Fully Buffered DIMM (FB-DIMM) designed for demanding server and workstation applications. Operating at a speed of 667MHz, it provides a significant bandwidth increase over earlier DDR generations, facilitating faster data processing and improved system responsiveness. The 2Rx4 configuration signifies that the module is dual-ranked, with each rank utilizing memory chips organized in a 4-bit-per-chip architecture. This arrangement enhances memory performance by allowing the memory controller to access different ranks independently, thereby increasing the effective bandwidth and reducing latency. The FB-DIMM form factor incorporates an Advanced Memory Buffer (AMB) chip on each module, which buffers all traffic between the memory controller and the DRAM chips, further improving signal integrity and enabling higher memory densities and speeds. With a CAS Latency (CL) of 5, this memory module strikes a balance between speed and timing. It is engineered for reliability and performance in mission-critical environments where uptime and data integrity are paramount. The MT36RTF51272FY-667GZN8ES is an ideal upgrade for systems that support DDR2 FB-DIMMs and require enhanced memory capacity and speed for virtualization, database operations, or complex computational tasks.