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Micron MT36HTF51272FY-80EEZD4ES 4GB DDR2-800MHz FB-DIMM 2Rx4 Memory
- 4GB capacity
- DDR2 SDRAM technology
- 800MHz (PC2-6400) speed
- Fully Buffered DIMM (FB-DIMM) form factor
- 2Rx4 memory organization
- CAS Latency: CL5
- ECC (Error-Correcting Code) support
- Optimized for high-throughput server environments
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Product Overview
The Micron MT36HTF51272FY-80EEZD4ES is a 4GB DDR2 Fully Buffered DIMM (FB-DIMM) memory module. It operates at a faster speed of 800MHz (PC2-6400) with a CAS latency of CL5, and features a 2Rx4 configuration, designed for high-performance server applications.
Technical Information
| Capacity | 4GB |
| Memory Type | DDR2 SDRAM |
| Speed | 800MHz |
| Form Factor | FB-DIMM |
Additional Specifications
| Rank | 2Rx4 |
| CAS Latency | CL5 |
| ECC | Yes |
Product Description
The Micron MT36HTF51272FY-80EEZD4ES is a high-capacity 4GB DDR2 memory module designed for servers and workstations that demand superior performance. Operating at a rapid 800MHz (PC2-6400), this module provides significantly increased bandwidth compared to lower-speed DDR2 modules, making it ideal for memory-intensive applications and virtualization environments. As a Fully Buffered DIMM (FB-DIMM), it incorporates an Advanced Memory Buffer (AMB) chip that enhances signal integrity and allows for greater memory scalability within server systems. The 2Rx4 configuration signifies its dual-rank structure, with each rank having four data bits per chip, contributing to its overall performance and efficiency in handling data requests. This memory module features a CAS Latency (CL) of 5, which is a common and effective timing for DDR2 memory at this speed. Crucially, it includes ECC (Error-Correcting Code) capabilities, a standard requirement for server-grade memory. ECC detects and corrects memory errors on the fly, preventing data corruption and ensuring the stability and reliability of critical server operations. The MT36HTF51272FY-80EEZD4ES is thus a robust choice for environments where uptime and data integrity are paramount.
