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Micron MT18KSF51272PZ-1G6K1 4GB DDR3-1600MHz RDIMM 1Rx4 CL11 Memory

Micron MT18KSF51272PZ-1G6K1 4GB DDR3-1600MHz RDIMM 1Rx4 CL11 Memory

SKU:MT18KSF51272PZ-1G6K1
  • Capacity: 4GB
  • Memory Type: DDR3 SDRAM
  • Form Factor: RDIMM (Registered DIMM)
  • Speed: 1600MHz (PC3-12800)
  • CAS Latency: CL11
  • Rank: 1Rx4 (Single Rank x4)
  • Voltage: 1.5V
  • ECC: Yes (Error-Correcting Code)
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Product Overview

The Micron MT18KSF51272PZ-1G6K1 is a 4GB DDR3 RDIMM memory module, specified for 1600MHz operation with a CL11 latency. It features a 1Rx4 rank configuration, designed for server and workstation platforms that require reliable and efficient memory performance. This module is suitable for upgrading or expanding memory capacity in compatible systems.

Technical Information

Capacity4GB
Memory TypeDDR3 SDRAM
Speed1600MHz
Form FactorRDIMM

Additional Specifications

LatencyCL11
Rank1Rx4
Voltage1.5V
ECCYes

Product Description

The Micron MT18KSF51272PZ-1G6K1 is a 4GB DDR3 Registered DIMM (RDIMM) memory module designed for server and workstation applications. It operates at a speed of 1600MHz (PC3-12800), providing robust data throughput for demanding computing tasks. The module's CAS Latency (CL) is rated at 11, which is typical for DDR3-1600 modules and contributes to its overall performance characteristics. This specific module utilizes a 1Rx4 rank configuration. This means it consists of a single rank of DRAM chips, where each chip is organized with four data bits per memory bank. This configuration is commonly found in server memory modules and is designed to offer a balance of performance, density, and compatibility with a wide range of server chipsets and processors. The 'K1' designation in the part number may indicate specific manufacturing or testing parameters, but the core technical specifications remain consistent with other 1Rx4 DDR3-1600 RDIMMs. As a Registered DIMM (RDIMM), this module incorporates a register chip that buffers command and address signals. This buffering reduces the electrical load on the memory controller, enabling systems to support higher memory capacities and potentially higher speeds with greater stability. Furthermore, the inclusion of Error-Correcting Code (ECC) functionality is standard for server-grade memory, providing critical data integrity by detecting and correcting single-bit errors, thereby enhancing system reliability and preventing data corruption in mission-critical environments.

Condition:Refurbished

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