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Micron MT18KSF51272PZ-1G6 4GB DDR3-1600MHz RDIMM 1Rx4 CL11 Memory

Micron MT18KSF51272PZ-1G6 4GB DDR3-1600MHz RDIMM 1Rx4 CL11 Memory

SKU:MT18KSF51272PZ-1G6
  • Capacity: 4GB
  • Memory Type: DDR3 SDRAM
  • Form Factor: RDIMM (Registered DIMM)
  • Speed: 1600MHz (PC3-12800)
  • CAS Latency: CL11
  • Rank: 1Rx4 (Single Rank x4)
  • Voltage: 1.5V
  • ECC: Yes (Error-Correcting Code)
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Product Overview

The Micron MT18KSF51272PZ-1G6 is a 4GB DDR3 RDIMM memory module, operating at a faster speed of 1600MHz (PC3-12800) with a CAS latency of CL11. This module is designed for server and workstation applications requiring enhanced memory performance and reliability. Its 1Rx4 configuration ensures broad compatibility with various server architectures.

Technical Information

Capacity4GB
Memory TypeDDR3 SDRAM
Speed1600MHz
Form FactorRDIMM

Additional Specifications

LatencyCL11
Rank1Rx4
Voltage1.5V
ECCYes

Product Description

The Micron MT18KSF51272PZ-1G6 is a 4GB DDR3 Registered DIMM (RDIMM) memory module engineered to deliver enhanced performance for server and workstation environments. It operates at a higher frequency of 1600MHz, also known as PC3-12800, which translates to increased data transfer rates compared to lower-speed DDR3 modules. This makes it suitable for applications that are sensitive to memory bandwidth, such as virtualization, large database operations, and complex data analysis. This module features a CAS Latency (CL) of 11, which is a standard for DDR3-1600 modules and represents the number of clock cycles required for the memory to respond to a column address command. The 1Rx4 rank configuration indicates a single rank of DRAM chips, with each chip organized to provide 4 data bits. This configuration is common in server memory and offers a good balance between density, performance, and compatibility with various memory controllers. As an RDIMM, the MT18KSF51272PZ-1G6 includes a register chip on the module itself. This register buffers the command and address signals between the memory controller and the DRAM chips, reducing the electrical load on the memory controller. This buffering allows for higher memory densities and speeds, as well as improved signal integrity, which is critical for system stability in multi-processor or high-capacity memory configurations. The module also incorporates Error-Correcting Code (ECC) capabilities, essential for detecting and correcting memory errors in mission-critical applications.

Condition:Refurbished

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