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Micron MT18KSF51272PDZ-1G6K1HG 4GB DDR3-1600MHz RDIMM 2Rx8 CL11 Memory
- Capacity: 4GB
- Type: DDR3 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 1600MHz (PC3-12800R)
- Latency: CL11
- Rank: 2Rx8 (Dual Rank x8)
- Manufacturer: Micron
- ECC: Yes (Error-Correcting Code)
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Product Overview
The Micron MT18KSF51272PDZ-1G6K1HG is a 4GB RDIMM (Registered DIMM) memory module. It operates at DDR3-1600MHz speed with a CL11 latency, designed for servers and workstations requiring reliable and efficient memory expansion.
Technical Information
| Product Type | Memory Module |
| Capacity | 4GB |
| Memory Technology | DDR3 SDRAM |
| Form Factor | RDIMM |
Additional Specifications
| Speed | 1600MHz |
| CAS Latency | CL11 |
| Rank | 2Rx8 |
| Manufacturer | Micron |
Product Description
The Micron MT18KSF51272PDZ-1G6K1HG is a 4GB Registered DIMM (RDIMM) memory module, engineered to provide robust performance and reliability for server and workstation systems. It utilizes DDR3 SDRAM technology and operates at a speed of 1600MHz, offering a bandwidth of PC3-12800R, which is essential for handling demanding workloads. This RDIMM incorporates Error-Correcting Code (ECC) capabilities, ensuring the detection and correction of memory errors to maintain system stability and data integrity. The registered design helps to alleviate the electrical load on the memory controller, enabling systems to support higher memory configurations and operate more efficiently. With a CAS Latency (CL) of 11 and a dual-rank (2Rx8) configuration, this module is optimized for efficient data access and multitasking. Micron's commitment to quality manufacturing ensures that the MT18KSF51272PDZ-1G6K1HG is a dependable choice for memory upgrades and system builds, providing consistent performance for critical applications.
