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Micron MT18KSF51272PDZ-1G6K1HE 4GB DDR3-1600MHz RDIMM 2Rx8 CL11 Memory

SKU MT18KSF51272PDZ-1G6K1HE
Brand Micron
  • 4GB DDR3 SDRAM Memory Module
  • Speed: 1600MHz (PC3-12800)
  • CAS Latency: CL11
  • Form Factor: 288-pin RDIMM (Registered DIMM)
  • Memory Organization: 2Rx8 (Dual Rank x8)
  • ECC (Error-Correcting Code) support
  • Designed for server and workstation applications
  • High reliability and performance
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Key specifications

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Memory Type
DDR3 SDRAM
Capacity
4GB
Speed
1600MHz
Module Type
RDIMM (Registered DIMM)
Rank
2Rx8
CAS Latency
CL11

Product details

The Micron MT18KSF51272PDZ-1G6K1HE is a 4GB DDR3 Synchronous Random Access Memory (SDRAM) module. It operates at a speed of 1600MHz (PC3-12800) with CAS Latency 11, featuring a 288-pin DIMM form factor and a 2Rx8 organization, making it suitable for servers and high-performance workstations.

Technical Information

Memory TypeDDR3 SDRAM
Capacity4GB
Speed1600MHz
Module TypeRDIMM (Registered DIMM)
Rank2Rx8

Additional Specifications

CAS LatencyCL11
Pins288-Pin
BrandMicron
Part NumberMT18KSF51272PDZ-1G6K1HE

Description

The Micron MT18KSF51272PDZ-1G6K1HE is a high-quality memory module engineered for demanding computing environments such as servers and workstations. This 4GB module utilizes DDR3 technology, offering a significant performance upgrade over previous generations of RAM. It operates at a clock speed of 1600MHz, commonly referred to as PC3-12800, which translates to a theoretical maximum bandwidth of 12.8 GB/s per module. This speed is crucial for applications that require rapid data access and processing. This specific module is a Registered DIMM (RDIMM), which includes onboard registers that buffer command and address signals between the memory controller and the DRAM chips. This buffering reduces electrical load on the memory controller, allowing for more memory modules to be installed in a system and improving overall system stability, especially in memory-intensive server configurations. The 2Rx8 organization indicates that the module consists of two ranks, each with eight DRAM chips, further optimizing performance and efficiency. Furthermore, the MT18KSF51272PDZ-1G6K1HE supports ECC (Error-Correcting Code) functionality. ECC memory can detect and correct common types of internal data corruption, significantly enhancing data integrity and system reliability. This feature is indispensable in server environments where data accuracy and uptime are paramount. With its combination of speed, capacity, RDIMM architecture, and ECC support, this Micron memory module is a robust choice for upgrading or populating servers requiring dependable and high-performance memory.

Condition: Refurbished

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