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Micron MT18KSF25672PZ-1G4F1AD 2GB DDR3-1333MHz RDIMM 1Rx4 CL9 Memory
- Capacity: 2GB
- Type: DDR3 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: DDR3-1333MHz (PC3-10600)
- Organization: 1Rx4 (1 Rank, 4 bits per chip)
- Latency: CL9
- Voltage: 1.5V
- ECC: Yes (Error-Correcting Code)
- Features: VDDQ termination, fly-by command/address bus.
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Product Overview
The Micron MT18KSF25672PZ-1G4F1AD is a 2GB DDR3 Registered DIMM (RDIMM) memory module. It is designed for servers and high-performance workstations requiring reliable and high-speed memory.
Technical Information
| Manufacturer | Micron |
| Part Number | MT18KSF25672PZ-1G4F1AD |
| Memory Type | DDR3 SDRAM |
| Capacity | 2GB |
| Form Factor | RDIMM |
| Speed | 1333MHz |
Additional Specifications
| Module Speed | PC3-10600 |
| CAS Latency | CL9 |
| Rank | 1Rx4 |
| Voltage | 1.5V |
| ECC | Yes |
Product Description
The Micron MT18KSF25672PZ-1G4F1AD is a 2 Gigabyte (GB) DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) module. This module is specifically designed as a Registered DIMM (RDIMM), which incorporates a register chip between the memory controller and the DRAM chips. This register buffers command and address signals, reducing electrical load on the memory controller and allowing for higher memory capacities and improved signal integrity, making it ideal for server and workstation environments. Operating at a speed of 1333MHz (also known as PC3-10600), this memory module provides substantial bandwidth for data-intensive applications. The 1Rx4 organization indicates that the module consists of one rank of DRAM chips, with each rank composed of four data bits per chip. This configuration is common in server memory. The module features Error-Correcting Code (ECC) functionality, which detects and corrects single-bit errors in real-time, enhancing system reliability and data integrity – a critical requirement for mission-critical applications. With a CAS Latency (CL) of 9, the MT18KSF25672PZ-1G4F1AD offers efficient data access times. It operates at a standard voltage of 1.5V, consistent with the DDR3 specification. This memory module is designed to meet the demanding performance and reliability needs of modern servers, workstations, and other high-performance computing platforms, ensuring smooth operation and stability for complex workloads.
