Safe Checkout
Secure Payments
Fast Delivery
Order Today
Free Shipping
Across the US
Easy Returns
Hassle-Free
Micron MT18KSF25672PDZ-1G4G1FG 2GB DDR3-1333MHz RDIMM 2Rx8 CL9 Memory
- 2GB Memory Capacity
- DDR3 SDRAM Technology
- 1333MHz Clock Speed
- Registered DIMM (RDIMM)
- 2Rx8 Dual Rank x8 Organization
- CL9 Latency
- Designed for servers and workstations
Click on Inquire to get latest price
Free U.S. Ground Shipping
Typically 1-2 handling + 3-7 transit days
Purchase orders accepted
For government, enterprise, data center, and small business customers.
Bulk Purchase Inquiry
Volume pricing and availability
Product Overview
The Micron MT18KSF25672PDZ-1G4G1FG is a 2GB DDR3-1333MHz Registered DIMM (RDIMM) memory module. It features a 2Rx8 configuration and CL9 latency, designed for server and workstation applications.
Technical Information
| Capacity | 2GB |
| Memory Type | DDR3 SDRAM |
| Speed | 1333MHz |
| Form Factor | DIMM |
Additional Specifications
| Module Type | RDIMM (Registered DIMM) |
| Rank | 2Rx8 (Dual Rank x8) |
| CAS Latency | CL9 |
| Manufacturer | Micron |
Product Description
The Micron MT18KSF25672PDZ-1G4G1FG is a high-performance 2GB memory module engineered for demanding computing environments such as servers and workstations. It utilizes DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) technology, operating at a speed of 1333MHz, which provides a significant boost in data transfer rates compared to previous generations. This module is a Registered DIMM (RDIMM), meaning it incorporates a register to buffer command and address signals, reducing electrical load on the memory controller and allowing for greater memory capacity and stability in multi-module configurations. The memory module features a 2Rx8 organization, indicating it is dual-ranked with each rank composed of eight memory chips. This configuration can enhance performance by allowing the memory controller to access different ranks independently, effectively doubling the bandwidth available to the module under certain conditions. The CAS (Column Access Strobe) latency is rated at CL9, which specifies the number of clock cycles required to access data in a column, representing a balance between speed and reliability for DDR3 memory. This specific Micron memory module is designed to meet the rigorous requirements of enterprise-grade systems where memory capacity, speed, and stability are paramount. Its specifications make it suitable for upgrading existing systems or for use in new builds that require reliable and efficient memory performance. The MT18KSF25672PDZ-1G4G1FG is a key component for enhancing the overall processing power and responsiveness of servers and high-end workstations.
