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Micron MT18KDF51272AZ-1G4K1ZE 4GB DDR3-1600MHz PC3-12800 ECC Unbuffered CL11 VLP URDIMM Memory
- Capacity: 4GB
- Type: DDR3 SDRAM
- Speed: 1600MHz (PC3-12800)
- ECC: Error-Correcting Code
- Buffering: Unbuffered
- Form Factor: 240-Pin VLP UDIMM
- Latency: CL11
- Designed for servers and workstations requiring memory integrity
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Product Overview
The Micron MT18KDF51272AZ-1G4K1ZE is a 4GB DDR3 ECC Unbuffered DIMM memory module. It operates at 1600MHz (PC3-12800) with CL11 latency and features a Very Low Profile (VLP) design, making it suitable for dense server environments.
Technical Information
| Capacity | 4 GB |
| Memory Type | DDR3 SDRAM |
| Speed | 1600 MHz |
| Part Number | MT18KDF51272AZ-1G4K1ZE |
Additional Specifications
| ECC | Yes |
| Buffering | Unbuffered |
| Form Factor | 240-Pin VLP UDIMM |
| Latency | CL11 |
Product Description
The Micron MT18KDF51272AZ-1G4K1ZE is a high-performance 4GB DDR3 memory module designed for server and workstation applications where data integrity and reliability are paramount. It operates at a speed of 1600MHz, corresponding to the PC3-12800 standard, ensuring efficient data processing and system responsiveness. This module features Error-Correcting Code (ECC) functionality, which detects and corrects single-bit errors in real-time, significantly reducing the risk of data corruption and system crashes. As an unbuffered DIMM (UDIMM), it offers a direct connection to the memory controller, providing lower latency and power consumption compared to registered DIMMs, making it ideal for systems that prioritize speed and efficiency. The Very Low Profile (VLP) design of this 240-pin UDIMM is particularly advantageous in dense server environments, such as blade servers or high-density rackmount systems, where space is at a premium. Its CL11 latency rating further contributes to its performance characteristics, making it a robust choice for demanding computing tasks.
