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Micron MT18HTF25672FDY-800EE2D 2GB DDR2-800MHz FB-DIMM 2Rx8 CL6 Memory
- Capacity: 2GB
- Memory Type: DDR2 SDRAM
- Form Factor: FB-DIMM (Fully Buffered DIMM)
- Speed: 800MHz (PC2-6400)
- Latency: CL6
- Configuration: 2Rx8 (Dual Rank, x8 devices)
- Voltage: 1.8V
- ECC: Yes (Error-Correcting Code)
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Product Overview
The Micron MT18HTF25672FDY-800EE2D is a 2GB FB-DIMM (Fully Buffered DIMM) memory module. It operates at DDR2 speeds of 800MHz with a CL6 latency, designed for servers and high-end workstations.
Technical Information
| Capacity | 2GB |
| Memory Type | DDR2 SDRAM |
| Form Factor | FB-DIMM |
| Speed | 800MHz |
Additional Specifications
| CAS Latency | CL6 |
| Rank | 2Rx8 |
| Voltage | 1.8V |
| ECC | Yes |
Product Description
The Micron MT18HTF25672FDY-800EE2D is a high-performance 2GB memory module utilizing DDR2 SDRAM technology. This module is specifically designed in the FB-DIMM (Fully Buffered DIMM) form factor, which incorporates an Advanced Memory Buffer (AMB) chip on each module. The AMB chip serializes data transfers between the memory controller and the DRAM devices, enabling higher speeds and greater memory capacities compared to traditional unbuffered DIMMs, particularly in server environments. Operating at a clock speed of 800MHz (equivalent to PC2-6400), this module delivers substantial bandwidth for memory-intensive applications. It features a CAS Latency (CL) of 6, indicating the number of clock cycles required to access data after a command is issued. The 2Rx8 configuration signifies that the module is dual-ranked and uses memory chips with an x8 data width, which can impact performance depending on the memory controller's capabilities. This FB-DIMM includes Error-Correcting Code (ECC) functionality, which detects and corrects single-bit errors in memory, enhancing system stability and data integrity. This makes it particularly suitable for servers, workstations, and other mission-critical systems where reliability is paramount. The standard operating voltage for DDR2 FB-DIMMs is 1.8V.
