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Micron MT18HTF25672FDY-53EA5D3 2GB DDR2-533MHz FB-DIMM 2Rx8 CL4 Memory
- Capacity: 2 GB
- Type: DDR2 SDRAM
- Form Factor: FB-DIMM (Fully Buffered DIMM)
- Speed: 533 MHz (PC2-4200)
- Configuration: 2Rx8 (Dual Rank x8)
- Latency: CL4
- Designed for server and workstation memory upgrades
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Product Overview
This Micron MT18HTF25672FDY-53EA5D3 is a 2GB DDR2 Fully Buffered DIMM (FB-DIMM) memory module. It operates at 533MHz with a 2Rx8 configuration and CL4 latency, designed for server and workstation applications.
Technical Information
| Capacity | 2 GB |
| Memory Type | DDR2 SDRAM |
| Form Factor | FB-DIMM |
| Speed | 533 MHz |
Additional Specifications
| Rank | 2Rx8 |
| CAS Latency | CL4 |
| Manufacturer | Micron |
| Part Number | MT18HTF25672FDY-53EA5D3 |
Product Description
The Micron MT18HTF25672FDY-53EA5D3 is a 2GB memory module engineered for high-performance computing environments, specifically utilizing the DDR2 FB-DIMM form factor. FB-DIMMs were designed to overcome the scalability limitations of traditional unbuffered DIMMs by incorporating an Advanced Memory Buffer (AMB) chip, which serializes data transfers and reduces electrical loading on the memory controller. This module operates at a speed of 533MHz, corresponding to PC2-4200, and features a 2Rx8 configuration, indicating it is dual-ranked with eight memory chips per rank. The CAS Latency (CL) is rated at 4, which is a measure of the delay between the memory controller requesting data and the data being available. This combination of speed, rank configuration, and latency is optimized for demanding server and workstation applications that require substantial memory bandwidth and capacity. Ideal for upgrading servers and workstations that support DDR2 FB-DIMM technology, this Micron memory module contributes to improved system performance by enabling faster data processing and multitasking capabilities. Its robust design and specifications make it a reliable choice for environments such as data centers, virtualization platforms, and high-end workstations where memory performance is critical.
