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Micron MT18HTF25672DY-53EEZES 2GB DDR2-533MHz RDIMM 2Rx8 CL4 Memory

Micron MT18HTF25672DY-53EEZES 2GB DDR2-533MHz RDIMM 2Rx8 CL4 Memory

SKU:MT18HTF25672DY-53EEZES
  • Capacity: 2GB
  • Type: DDR2 SDRAM
  • Form Factor: RDIMM (Registered DIMM)
  • Speed: 533MHz (PC2-4200)
  • Configuration: 2Rx8 (Dual Rank, x8)
  • Latency: CL4
  • Voltage: 1.8V (typical for DDR2)
  • Designed for server and workstation environments
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Product Overview

This Micron 2GB DDR2 RDIMM memory module operates at 533MHz (PC2-4200) and features a 2Rx8 configuration with CL4 latency. It is designed for servers and workstations that support DDR2 Registered DIMMs, providing reliable performance for demanding applications.

Technical Information

Memory TypeDDR2 SDRAM
Capacity2GB
Form FactorRDIMM
Speed533MHz

Additional Specifications

Part NumberMT18HTF25672DY-53EEZES
Rank2Rx8
CAS LatencyCL4
ECCYes (Registered DIMMs typically include ECC)

Product Description

The Micron MT18HTF25672DY-53EEZES is a 2GB DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module designed for high-performance computing environments, specifically servers and workstations. This module is a Registered DIMM (RDIMM), which means it includes an onboard register that buffers the command and address signals between the memory controller and the DRAM chips. This buffering reduces electrical load on the memory controller, allowing for more memory modules to be installed per channel and improving overall system stability, especially in systems with large amounts of RAM. Operating at a clock speed of 533MHz, this module corresponds to the PC2-4200 standard, indicating a theoretical maximum bandwidth of 4200 MB/s. The 2Rx8 designation signifies that the module is dual-ranked, with each rank utilizing eight memory chips (x8). Dual-rank modules can offer performance benefits in certain scenarios by allowing the memory controller to access data from different ranks concurrently, although they can sometimes place a slightly higher load on the memory controller compared to single-rank modules. The CAS Latency (CL) of 4 clock cycles indicates the delay between the memory controller issuing a column-address command and the data becoming available on the module's output pins. This specific DDR2 RDIMM is built with reliability and performance in mind, making it suitable for mission-critical applications where uptime and data integrity are paramount. The registered nature of the DIMM inherently provides error correction capabilities (ECC) at the module level, which is essential for servers handling large datasets or running continuous operations. Its specifications make it a compatible upgrade or replacement for systems requiring DDR2 memory with these particular performance characteristics.

Condition:Refurbished

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