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Micron MT18HTF12872PDY-667FZES 1GB DDR2-667MHz RDIMM 2Rx8 CL5 Memory

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Micron MT18HTF12872PDY-667FZES 1GB DDR2-667MHz RDIMM 2Rx8 CL5 Memory

SKU MT18HTF12872PDY-667FZES
Brand Micron
  • 1GB DDR2 SDRAM
  • Speed: 667MHz (PC2-5300)
  • Type: Registered DIMM (RDIMM)
  • Organization: 2Rx8 (Dual Rank x8)
  • CAS Latency: CL5
  • Voltage: Standard DDR2 voltage
  • ECC: Error-Correcting Code support
  • Designed for server and workstation environments
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Key specifications

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Capacity
1GB
Memory Type
DDR2 SDRAM
Speed
667MHz
Form Factor
RDIMM
Rank
2Rx8
CAS Latency
CL5

Product details

The Micron MT18HTF12872PDY-667FZES is a 1GB DDR2-667MHz RDIMM memory module. It features a 2Rx8 organization and CL5 latency, making it suitable for servers and workstations requiring reliable and high-performance RAM.

Technical Information

Capacity1GB
Memory TypeDDR2 SDRAM
Speed667MHz
Form FactorRDIMM

Additional Specifications

Rank2Rx8
CAS LatencyCL5
ECCYes

Description

The Micron MT18HTF12872PDY-667FZES is a high-quality memory module designed to enhance the performance and stability of server and workstation systems. With a capacity of 1GB, it utilizes DDR2 SDRAM technology, operating at a frequency of 667MHz, which corresponds to a PC2-5300 data rate. This speed ensures efficient data transfer between the memory and the system's processor, contributing to overall system responsiveness. This module is a Registered DIMM (RDIMM), which includes an onboard register to buffer command and address signals. This buffering reduces electrical load on the memory controller, allowing for more memory modules to be installed and improving signal integrity, especially in systems with high memory configurations. The 2Rx8 organization indicates that the module consists of two ranks, each with eight memory chips, further optimizing performance and capacity utilization. The MT18HTF12872PDY-667FZES also features Error-Correcting Code (ECC) capabilities, meaning it can detect and correct single-bit errors in memory, and detect multi-bit errors. This is crucial for mission-critical applications where data integrity is paramount. The CAS Latency of CL5 specifies the number of clock cycles it takes for the memory to respond to a column address strobe command, providing a balance between speed and stability for DDR2 memory.

Condition: Refurbished

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