Micron MT18HTF12872MDY-667F1B4 1GB DDR2-667MHz FB-DIMM 2Rx8 CL5 Memory

Description

The Micron MT18HTF12872MDY-667F1B4 is a high-density 1GB memory module engineered for demanding server and workstation environments. It utilizes DDR2 SDRAM technology, operating at a clock speed of 667MHz, which translates to a bandwidth of 5300MB/s per pin. This module is a Fully Buffered DIMM (FB-DIMM), characterized by an Advanced Memory Buffer (AMB) chip that buffers all traffic between the memory controller and the DRAM devices. This buffering significantly reduces electrical loading, allowing for higher densities and improved signal integrity, crucial for systems with many memory modules installed. This specific module features a 2Rx8 organization, meaning it consists of two ranks of memory chips, each with eight data lines. This dual-rank design can enhance performance in certain memory access patterns by allowing the memory controller to interleave operations between the ranks. The CAS Latency (CL) of 5 indicates the number of clock cycles required for the memory to respond to a column command. While higher latency can sometimes be a trade-off for higher speeds or densities, CL5 at 667MHz is a common and effective configuration for DDR2 FB-DIMMs. Furthermore, the MT18HTF12872MDY-667F1B4 incorporates Error-Correcting Code (ECC) functionality. ECC memory can detect and correct single-bit errors on the fly, and detect (but not always correct) multi-bit errors. This capability is vital in server environments where data integrity is paramount, preventing system crashes and data corruption caused by transient memory errors. The standard operating voltage for DDR2 FB-DIMMs is 1.8V, ensuring compatibility with the specified memory controllers and motherboards.

Condition: Refurbished