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Hynix HMT42GR7AFR4C-PBT8-AF 16GB DDR3-1600MHz RDIMM 2Rx4 CL11 Memory

Hynix HMT42GR7AFR4C-PBT8-AF 16GB DDR3-1600MHz RDIMM 2Rx4 CL11 Memory

SKU:HMT42GR7AFR4C-PBT8-AF
  • 16GB DDR3 SDRAM
  • Speed: 1600MHz (PC3-12800R)
  • Form Factor: RDIMM (Registered DIMM)
  • CAS Latency: CL11
  • Dual Rank (2Rx4)
  • Voltage: 1.5V
  • ECC Registered
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Product Overview

The Hynix HMT42GR7AFR4C-PBT8-AF is a 16GB DDR3 Registered DIMM (RDIMM) memory module. It operates at 1600MHz with a CAS Latency of CL11 and features a dual-rank (2Rx4) configuration.

Technical Information

Memory TypeDDR3 SDRAM
Capacity16GB
Speed1600MHz
Part NumberHMT42GR7AFR4C-PBT8-AF
BrandHynix

Additional Specifications

Form FactorRDIMM
ECCYes (Registered)
Rank2Rx4
CAS LatencyCL11
Voltage1.5V

Product Description

This Hynix HMT42GR7AFR4C-PBT8-AF is a high-capacity 16GB DDR3 Registered DIMM (RDIMM) module, designed for server and workstation environments that demand high memory bandwidth and stability. Operating at a speed of 1600MHz, it provides excellent performance for memory-intensive applications. The 'PBT8-AF' suffix denotes specific manufacturing and quality control parameters set by Hynix for this particular module. The module features ECC (Error-Correcting Code) registered memory. The 'Registered' aspect means it includes an onboard register that buffers command and address signals, reducing electrical load on the memory controller and allowing for higher memory capacities and more DIMMs per channel. ECC functionality further enhances data integrity by detecting and correcting errors, which is critical for server uptime and reliability. With a dual-rank (2Rx4) configuration, this RDIMM offers improved performance through efficient memory interleaving. The CAS Latency (CL) is CL11, providing a balance between speed and timing. This 16GB module is an ideal choice for upgrading servers and workstations that require substantial memory resources for virtualization, large databases, scientific computing, and other demanding workloads.

Condition:Refurbished

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