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Hynix HMT42GR7AFR4C-PBT8 16GB DDR3-1600MHz RDIMM 2Rx4 CL11 Memory
- 16GB DDR3 SDRAM capacity
- 1600MHz (PC3-12800) memory speed
- Registered DIMM (RDIMM) for error correction and buffering
- 2Rx4 module configuration (dual rank, four data bits per chip)
- CL11 CAS Latency
- 1.5V voltage
- ECC (Error-Correcting Code) support
- Designed for server and high-performance computing
HMT42GR7AFR4C-PBT8 isn't on our shelf today — we source it to order. Request a quote and we'll confirm price and lead time within one business day.
Key specifications
See full specs ↓- Memory Type
- DDR3 SDRAM
- Capacity
- 16GB
- Speed
- 1600MHz
- Form Factor
- RDIMM
- Rank
- 2Rx4
- CAS Latency
- CL11
Product details
The Hynix HMT42GR7AFR4C-PBT8 is a 16GB DDR3 Registered DIMM (RDIMM) memory module designed for server and workstation environments. It operates at a speed of 1600MHz with timings of CL11, offering a balance of capacity and performance for demanding applications.
Technical Information
| Memory Type | DDR3 SDRAM |
| Capacity | 16GB |
| Speed | 1600MHz |
| Form Factor | RDIMM |
Additional Specifications
| Rank | 2Rx4 |
| CAS Latency | CL11 |
| Voltage | 1.5V |
| ECC | Yes |
Description
The Hynix HMT42GR7AFR4C-PBT8 is a high-density memory module engineered to meet the rigorous demands of enterprise-level computing. Its 16GB capacity, coupled with DDR3 technology, provides substantial bandwidth for multitasking and memory-intensive applications. The module's 1600MHz clock speed ensures rapid data access, crucial for server operations and virtualized environments where responsiveness is paramount. As a Registered DIMM (RDIMM), this module incorporates an onboard register that buffers command and address signals between the memory controller and the DRAM chips. This buffering reduces electrical load on the memory controller, allowing for more memory modules to be installed per channel and improving overall system stability, especially in systems with a large number of DIMMs. The 2Rx4 configuration indicates that the module is dual-ranked, with each rank utilizing four data bits per DRAM chip, further enhancing performance by allowing for more simultaneous operations. With a CAS Latency (CL) of 11, the HMT42GR7AFR4C-PBT8 offers a good balance between speed and latency for DDR3 memory. The module operates at a standard voltage of 1.5V, making it compatible with a wide range of DDR3 server platforms. Its ECC (Error-Correcting Code) capability is vital for maintaining data integrity in critical applications, detecting and correcting single-bit errors on the fly, thereby preventing system crashes and data corruption.
Condition: Refurbished
Free U.S. ground shipping
Typically 1–2 days handling, 3–7 days in transit.
Purchase orders accepted
Government, enterprise, data center and small business.
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