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Hynix HMCG88AEBRA111N 32GB DDR5-4800MHz RDIMM 2Rx4 CL40 Memory
- Capacity: 32GB
- Type: DDR5 Registered DIMM (RDIMM)
- Speed: 4800MHz (PC5-38400)
- Rank: 2Rx4 (Dual Rank x4)
- Latency: CL40
- Voltage: 1.1V
- ECC: Yes (Error-Correcting Code)
- Designed for advanced servers and data centers.
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Typically 1-2 handling + 3-7 transit days
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Product Overview
The Hynix HMCG88AEBRA111N is a 32GB DDR5 RDIMM memory module. It operates at a high speed of 4800MHz with a 2Rx4 rank configuration and CL40 latency, designed for next-generation servers and high-performance computing.
Technical Information
| Memory Size | 32GB |
| Memory Type | DDR5 SDRAM |
| Form Factor | RDIMM |
| Speed | 4800MHz |
Additional Specifications
| Rank | 2Rx4 |
| CAS Latency | CL40 |
| Manufacturer | Hynix |
| Part Number | HMCG88AEBRA111N |
Product Description
The Hynix HMCG88AEBRA111N is a high-capacity 32GB DDR5 Registered DIMM (RDIMM) memory module, representing a significant leap in memory technology for demanding server and data center applications. Operating at an impressive speed of 4800MHz (PC5-38400), this module delivers enhanced bandwidth and reduced latency, crucial for accelerating modern workloads. This module features a 2Rx4 configuration, meaning it is dual-ranked with four memory chips per rank. This design allows for greater memory density and can improve performance by enabling the memory controller to interleave operations across ranks. The CAS Latency (CL) is rated at 40, which is typical for DDR5 modules at this speed, balancing performance with the advanced features of the new standard. As a DDR5 RDIMM, it includes advanced features such as on-die ECC for improved reliability and power management enhancements. The Registered DIMM architecture helps to reduce the electrical load on the memory controller, allowing for higher memory capacities and greater system stability. This makes the HMCG88AEBRA111N an ideal choice for high-performance servers, cloud computing infrastructure, AI/ML workloads, and other applications that require cutting-edge memory performance and capacity.
