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Hynix HMCG88AEBRA115N 32GB DDR5-4800MHz RDIMM 2Rx4 CL40 Memory
- Capacity: 32GB
- Memory Type: DDR5 SDRAM
- Speed: 4800MHz (PC5-38400R)
- Form Factor: RDIMM (Registered DIMM)
- Organization: 2Rx4 (2 Ranks x 4 bits)
- Latency: CL40
- Voltage: 1.1V
- Designed for high-performance computing and server applications
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Product Overview
The Hynix HMCG88AEBRA115N is a 32GB DDR5 RDIMM (Registered DIMM) memory module. It operates at a high frequency of 4800MHz and features a 2 Rank x 4 bit configuration with a CAS Latency of CL40, designed for next-generation server and workstation platforms.
Technical Information
| Memory Size | 32GB |
| Memory Type | DDR5 SDRAM |
| Speed | 4800MHz |
| Form Factor | RDIMM |
Additional Specifications
| Rank | 2R |
| Data Width | x4 |
| CAS Latency | CL40 |
| Voltage | 1.1V |
Product Description
The Hynix HMCG88AEBRA115N represents a significant leap in memory technology, offering a substantial 32GB capacity in a DDR5 RDIMM format. DDR5 introduces architectural improvements over DDR4, including higher bandwidth, increased power efficiency, and enhanced features like on-die ECC (Error Correction Code) for improved data integrity. This module is specifically designed for server and high-performance computing environments where large amounts of memory and high speeds are critical for processing complex datasets and running demanding applications. Operating at a rapid 4800MHz, this memory module provides exceptional data transfer rates, crucial for modern processors that can consume data at an accelerated pace. The PC5-38400R designation signifies its performance tier within the DDR5 standard. The 2Rx4 configuration indicates a dual-rank design where each rank is composed of memory chips with a 4-bit data width. This arrangement can enhance performance by allowing the memory controller to access data from multiple ranks, effectively increasing the available bandwidth and improving system responsiveness. The CAS Latency (CL) of 40 is characteristic of DDR5 memory at these high frequencies, reflecting the trade-offs between clock speed and timing. DDR5 memory controllers are designed to manage these latencies effectively. Operating at a lower voltage of 1.1V compared to previous DDR generations, this module also contributes to improved power efficiency within server systems, reducing heat generation and overall energy consumption. This Hynix module is a key component for building next-generation servers and workstations requiring cutting-edge memory performance and capacity.
