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Hynix HMCG78MEBRA111N 16GB DDR5-4800MHz RDIMM 1Rx8 CL40 Memory
- Capacity: 16GB
- Memory Type: DDR5 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 4800MHz
- CAS Latency: CL40
- Configuration: 1R x 8 Banks (1Rx8)
- Voltage: 1.1V (standard DDR5)
- ECC: Yes (Registered ECC)
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Product Overview
The Hynix HMCG78MEBRA111N is a 16GB DDR5 Registered DIMM (RDIMM) memory module. It operates at a high speed of 4800MHz with CL40 latency, designed for next-generation servers and workstations demanding extreme bandwidth. Its 1 rank x 8 bits configuration is typical for high-density DDR5 modules.
Technical Information
| Capacity | 16GB |
| Memory Type | DDR5 SDRAM |
| Form Factor | RDIMM |
| Speed | 4800MHz |
| CAS Latency | CL40 |
Additional Specifications
| Rank | 1R |
| Bank Group | 8 Banks |
| ECC | Registered ECC |
| Voltage | 1.1V |
Product Description
The Hynix HMCG78MEBRA111N is a cutting-edge 16GB DDR5 RDIMM, representing a significant leap in memory performance and efficiency. Designed for the most demanding server and workstation applications, it leverages the advanced architecture of DDR5 to deliver unprecedented bandwidth. The module operates at a blistering 4800MHz, providing a substantial increase in data throughput compared to previous DDR generations. This makes it ideal for data-intensive workloads such as AI/ML, high-performance computing (HPC), and advanced data analytics. As a Registered DIMM (RDIMM), this module includes an onboard register that buffers command and address signals. This feature reduces the electrical load on the memory controller, enabling higher memory capacities and densities per channel, which is crucial for modern multi-processor server systems. The 1Rx8 organization signifies a single rank with an 8-bit data width per DRAM chip, a common and efficient configuration for high-performance DDR5 modules, optimizing signal integrity and bandwidth. The CAS Latency (CL) of 40 is characteristic of high-speed DDR5 memory, where the increased clock frequency allows for higher latency values while still achieving superior overall performance. DDR5 also introduces features like on-die ECC (ODECC) for improved reliability at the chip level, and a lower operating voltage of 1.1V, contributing to better power efficiency. The HMCG78MEBRA111N is engineered for maximum performance and reliability in enterprise-grade systems.
