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Hynix HMCG78MEBRA110N 16GB DDR5-4800MHz RDIMM 1Rx8 CL40 Memory
- Capacity: 16GB
- Memory Type: DDR5 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 4800MHz
- CAS Latency: CL40
- Rank: 1Rx8 (Single Rank x8)
- Voltage: 1.1V
- ECC: Yes (Error-Correcting Code)
Was $960.82 · You save $143.82
Key specifications
See full specs ↓- Manufacturer
- Hynix
- Part Number
- HMCG78MEBRA110N
- Memory Size
- 16GB
- Memory Technology
- DDR5 SDRAM
- Memory Speed
- 4800MHz
- Module Type
- RDIMM
Product details
This Hynix HMCG78MEBRA110N module is a 16GB DDR5 Registered DIMM (RDIMM) memory stick. It operates at a high speed of 4800MHz with a CAS Latency of 40, designed for next-generation servers and high-performance computing. The 1Rx8 configuration indicates a single rank of memory chips, each with an 8-bit data width.
Technical Information
| Manufacturer | Hynix |
| Part Number | HMCG78MEBRA110N |
| Memory Size | 16GB |
| Memory Technology | DDR5 SDRAM |
| Memory Speed | 4800MHz |
Additional Specifications
| Module Type | RDIMM |
| Rank | 1Rx8 |
| CAS Latency | CL40 |
| Voltage | 1.1V |
Description
The Hynix HMCG78MEBRA110N is a 16GB DDR5 Registered DIMM (RDIMM) memory module, representing a significant advancement in memory technology for server and high-performance computing environments. DDR5 introduces substantial improvements over DDR4, including higher bandwidth, increased power efficiency, and enhanced features for reliability and performance. This module operates at a blazing speed of 4800MHz, providing exceptional data throughput crucial for data-intensive workloads and modern processors. As a Registered DIMM (RDIMM), this module incorporates an onboard register that buffers command and address signals. This reduces the electrical load on the memory controller, enabling higher memory densities and improved system stability, especially in systems populated with numerous memory modules. The 1Rx8 rank configuration signifies a single rank of DRAM chips, each with an 8-bit data interface, which is a standard configuration for many server applications. The CAS Latency (CL) of 40, while appearing higher than DDR4, is relative to the significantly faster clock speeds of DDR5, resulting in comparable or improved actual latency performance. Operating at the standard DDR5 voltage of 1.1V, this module is designed for energy efficiency. It also supports Error-Correcting Code (ECC) functionality, which is vital for maintaining data integrity in critical server operations by detecting and correcting memory errors. The HMCG78MEBRA110N is built to meet the demanding requirements of next-generation servers, facilitating faster processing, improved multitasking, and enhanced overall system responsiveness.
Condition: Refurbished
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