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HP A3T16AV 8GB Kit (4x2GB) DDR3-1600MHz UDIMM 1Rx8 CL11 Memory
- 8GB Total Memory Capacity
- Kit of 4 x 2GB Modules
- DDR3 SDRAM Technology
- Speed: 1600MHz (PC3-12800)
- Type: UDIMM (Unbuffered DIMM)
- Configuration: 1Rx8 (Single Rank)
- CAS Latency: CL11
- Designed for compatible HP systems
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Product Overview
The HP A3T16AV is an 8GB memory kit consisting of four 2GB DDR3-1600MHz Unbuffered DIMM (UDIMM) modules. Each module is configured as 1Rx8 (single rank, 8 bits wide) and has a CAS Latency (CL) of 11, suitable for compatible HP systems requiring DDR3 memory upgrades.
Technical Information
| Product Type | Memory Kit |
| Brand | HP |
| SKU | A3T16AV |
| Capacity | 8GB (4 x 2GB) |
| Memory Type | DDR3 SDRAM |
Additional Specifications
| Speed | 1600MHz |
| Form Factor | UDIMM |
| Rank | 1Rx8 |
| CAS Latency | CL11 |
Product Description
The HP A3T16AV is a memory upgrade kit designed to enhance the performance of compatible HP computer systems. This kit provides a total of 8 Gigabytes (GB) of RAM, distributed across four individual 2GB memory modules. These modules are based on DDR3 SDRAM technology, which was a standard for many computing platforms prior to the advent of DDR4 and DDR5. The memory operates at a speed of 1600MHz, also known as PC3-12800, ensuring fast data access for the system's processor. Each module is an Unbuffered DIMM (UDIMM), a common type of RAM module that does not have a buffer chip, making it suitable for a wide range of desktop and server applications where direct memory access is preferred. The 1Rx8 configuration indicates that each module is single-ranked, with an 8-bit data width per chip, a standard configuration for many memory modules. With a CAS Latency (CL) of 11, these memory modules offer a balance between speed and timing. Lower CL values generally indicate faster response times. This kit is specifically validated for use with HP systems, ensuring compatibility and optimal performance within the HP ecosystem. Upgrading memory with this kit can significantly improve system responsiveness, multitasking capabilities, and the performance of memory-intensive applications.
