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Samsung M396B2K73BH0-YF8M1 16GB DDR3-1066MHz CDIMM 2Rx8 CL7 Memory

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Samsung M396B2K73BH0-YF8M1 16GB DDR3-1066MHz CDIMM 2Rx8 CL7 Memory

SKU M396B2K73BH0-YF8M1
Brand Samsung
  • 16GB DDR3 SDRAM capacity
  • 1066MHz (PC3-8500) memory speed
  • LRDIMM (Load-Reduced DIMM) for enhanced scalability
  • 2Rx8 memory organization (dual rank, 8 bits wide per chip)
  • CL7 CAS Latency
  • 240-pin DIMM form factor
  • ECC (Error-Correcting Code) support
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Key specifications

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Memory Capacity
16GB
Memory Type
DDR3 SDRAM
Form Factor
LRDIMM
Speed
1066MHz
Rank
2Rx8
CAS Latency
CL7

Product details

The Samsung M396B2K73BH0-YF8M1 is a 16GB DDR3 Load-Reduced DIMM (LRDIMM) memory module. It operates at 1066MHz with a CAS Latency of 7, designed for high-capacity server applications.

Technical Information

Memory Capacity16GB
Memory TypeDDR3 SDRAM
Form FactorLRDIMM
Speed1066MHz

Additional Specifications

Rank2Rx8
CAS LatencyCL7
Voltage1.5V (typical)
Pins240

Description

This Samsung M396B2K73BH0-YF8M1 module is a high-capacity 16GB LRDIMM, engineered to overcome the limitations of traditional RDIMMs in dense memory configurations. LRDIMMs utilize a memory buffer chip, which significantly reduces the electrical load on the memory controller, allowing for more DIMMs per channel and higher overall system memory capacity. This makes them ideal for memory-intensive applications such as large-scale virtualization, in-memory databases, and high-performance computing clusters.

Condition: Refurbished

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Typically 12 days handling, 37 days in transit.

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