Samsung M393B5270DH0-YH908 4GB DDR3-1333MHz RDIMM 1Rx4 CL9 Memory

SKU M393B5270DH0-YH908

Brand Samsung

4 GB DDR3
240-pin DIMM 1 x 4 GB
CAS latency: 9
1.35,1.5 V
ECC

Available to order

M393B5270DH0-YH908 isn't on our shelf today — we source it to order. Request a quote and we'll confirm price and lead time within one business day.

Key specifications

See full specs ↓

CAS latency: 9
Internal memory: 4 GB
Memory layout (modules x size): 1 x 4 GB
Internal memory type: DDR3
Memory clock speed: 1333 MHz
Memory form factor: 240-pin DIMM

Documents

Brochure Samsung M393B5270DH0-YH908Brochure · PDF

Product details

Samsung M393B5270DH0-YH908. Internal memory: 4 GB, Memory layout (modules x size): 1 x 4 GB, Internal memory type: DDR3, Memory clock speed: 1333 MHz, Memory form factor: 240-pin DIMM, CAS latency: 9, ECC

Features

CAS latency	9
Internal memory	4 GB
Memory layout (modules x size)	1 x 4 GB
Internal memory type	DDR3
Memory clock speed	1333 MHz
Memory form factor	240-pin DIMM
ECC	Yes
Buffered memory type	Registered (buffered)
Memory voltage	1.35,1.5 V
SPD profile	Yes

Weight & dimensions

Height

30 mm

Packaging data

Package type

DIMM

Other features

Chips organisation

512Mx72

Description

DRAM is a type of RAM (random access memory) used as the main memory in several computing devices, such as desktop and notebook computers, servers, and high-end workstations. It is the most widely used semiconductor memory used in current generation computers, and offers several significant advantages, such as structural simplicity, very high packing densities (number of bytes that can be stored per unit of chip area), low power consumption, and sufficiently high data read/write speeds. Several types of DRAM are presently available for deployment on various computing platforms, such as home/personal computers, portable computers, and network servers. This type of memory has undergone several innovative technological developments and offers very high price/performance ratios.

Condition: Refurbished