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Samsung M393B2K70CM0-YF804 16GB DDR3-1066MHz RDIMM 4Rx4 CL7 Memory
- 16GB DDR3 SDRAM capacity
- 1066MHz memory speed (PC3-8500R)
- Registered DIMM (RDIMM) for server use
- 4 ranks x 4 banks (4Rx4) configuration
- CAS Latency (CL) of 7
- ECC (Error-Correcting Code) support
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Product Overview
The Samsung M393B2K70CM0-YF804 is a 16GB DDR3 RDIMM (Registered DIMM) memory module. It operates at 1066MHz with CL7 timings, designed for server and workstation applications requiring high reliability and performance.
Technical Information
| Memory Type | DDR3 SDRAM |
| Capacity | 16 GB |
| Speed | 1066 MHz (PC3-8500R) |
| Form Factor | RDIMM |
Additional Specifications
| Rank | 4Rx4 |
| CAS Latency | CL7 |
| ECC | Yes |
Product Description
The Samsung M393B2K70CM0-YF804 is a high-capacity 16GB memory module specifically designed for server and high-performance computing environments. It utilizes DDR3 SDRAM technology, operating at a speed of 1066MHz, which corresponds to a PC3-8500R designation. The 'R' in the designation signifies that this is a Registered DIMM (RDIMM), a type of memory module that includes a register chip to buffer command and address signals, reducing electrical load on the memory controller and allowing for higher memory capacities and greater stability in multi-processor systems. This module features a 4Rx4 configuration, meaning it has four ranks, each composed of four bits per DRAM chip. This configuration can offer performance benefits in certain server workloads. Crucially, it supports ECC (Error-Correcting Code) functionality. ECC memory can detect and correct common types of internal data corruption, making it indispensable for mission-critical applications where data integrity is paramount, such as in databases, financial systems, and scientific simulations. With a CAS Latency (CL) of 7, the M393B2K70CM0-YF804 offers a balance between speed and latency suitable for demanding server tasks. This module is an ideal upgrade or replacement component for compatible servers and workstations that require reliable, high-density memory with error correction capabilities to ensure optimal performance and uptime.
