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Samsung M393B2G70EB0-YK003 16GB DDR3-1600MHz RDIMM 2Rx4 CL11 Memory
- Capacity: 16GB
- Memory Type: DDR3 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 1600MHz (PC3-12800)
- CAS Latency: CL11
- Configuration: 2Rx4 (Dual Rank, x4 Data Width per Chip)
- ECC: Yes (Registered DIMMs typically support ECC)
- Voltage: 1.5V (Standard for DDR3)
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Product Overview
The Samsung M393B2G70EB0-YK003 is a 16GB DDR3 RDIMM (Registered DIMM) memory module. It operates at a speed of 1600MHz (PC3-12800) with timings of CL11. This module features a 2Rx4 rank configuration, indicating two ranks of memory chips per module, with four chips per rank.
Technical Information
| Capacity | 16GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM |
| Speed | 1600MHz |
Additional Specifications
| Part Number | M393B2G70EB0-YK003 |
| Rank | 2Rx4 |
| CAS Latency | CL11 |
| Brand | Samsung |
Product Description
The Samsung M393B2G70EB0-YK003 is a high-capacity 16GB memory module designed for server and workstation environments. It utilizes DDR3 SDRAM technology, operating at a frequency of 1600MHz, which corresponds to a PC3-12800 data rate. This speed is suitable for a wide range of enterprise applications that require substantial memory bandwidth. This module is an RDIMM (Registered DIMM), which means it includes a register chip that buffers command and address signals. This buffering reduces electrical load on the memory controller, allowing for more memory modules to be installed per channel and improving overall system stability, especially in memory-intensive configurations. The 2Rx4 configuration indicates that the module has two ranks of memory chips, with each chip having a data width of 4 bits. This configuration can offer performance benefits in certain access patterns. With a CAS Latency (CL) of 11, this memory module strikes a balance between speed and latency. It is designed to be compatible with systems that support DDR3 1600MHz RDIMMs and typically includes Error-Correcting Code (ECC) functionality, which is standard for registered memory, to detect and correct single-bit memory errors, thereby enhancing data integrity and system reliability.
