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Samsung M393B1K70DH0-YH9-C 8GB DDR3-1333MHz RDIMM 2Rx4 CL9 Memory
- Capacity: 8GB
- Type: DDR3 SDRAM
- Speed: 1333MHz (PC3-10600R)
- Form Factor: DIMM
- ECC Type: Registered (RDIMM)
- Rank: 2Rx4 (Dual Rank x4)
- Latency: CL9
- Voltage: 1.5V
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Product Overview
The Samsung M393B1K70DH0-YH9-C is an 8GB DDR3-1333MHz RDIMM (Registered DIMM) memory module. It features a 2Rx4 configuration and CL9 latency, designed for server and workstation environments requiring reliable and high-performance memory. This module is suitable for systems that support DDR3 RDIMMs.
Technical Information
| Capacity | 8GB |
| Memory Type | DDR3 SDRAM |
| Speed | 1333MHz |
| Form Factor | RDIMM |
Additional Specifications
| Rank | 2Rx4 |
| CAS Latency | CL9 |
| Brand | Samsung |
Product Description
This Samsung memory module, identified by the part number M393B1K70DH0-YH9-C, is an 8GB DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) module. It operates at a speed of 1333MHz, also known as PC3-10600R, providing substantial bandwidth for memory-intensive applications. The module is designed in a standard DIMM form factor, commonly used in servers and high-end workstations. The module is a Registered DIMM (RDIMM), which includes a register chip that buffers the command and address signals between the memory controller and the DRAM chips. This buffering reduces electrical load on the memory controller, allowing for more memory modules to be installed in a system and improving overall system stability. The 2Rx4 configuration indicates that the module has two ranks, each composed of x4 (4-bit wide) DRAM chips, offering a balanced approach to performance and density. With a CAS Latency (CL) of 9, this memory module offers a relatively low latency for its class, contributing to efficient data access. The standard operating voltage for DDR3 RDIMMs is 1.5V. This specific Samsung module is engineered for reliability and performance in server environments, making it suitable for tasks such as virtualization, database management, and scientific computing where memory capacity and speed are critical.
