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Samsung M393B1K70CH0-CH9E4 8GB DDR3-1333MHz RDIMM 2Rx4 CL9 Memory
- Capacity: 8GB
- Type: DDR3 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: PC3-10600 (1333MHz)
- Rank: 2Rx4 (Dual Rank x4)
- Latency: CL9
- Voltage: 1.5V
- ECC: Yes (Error-Correcting Code)
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Product Overview
The Samsung M393B1K70CH0-CH9E4 is an 8GB DDR3 Registered DIMM (RDIMM) memory module, operating at 1333MHz with a CL9 latency. It is designed for server and workstation applications requiring stable and efficient memory performance.
Technical Information
| Memory Size | 8GB |
| Memory Type | DDR3 SDRAM |
| Memory Speed | 1333MHz |
| Form Factor | RDIMM |
Additional Specifications
| Rank | 2Rx4 |
| CAS Latency | CL9 |
| Voltage | 1.5V |
| ECC | Yes |
Product Description
This Samsung M393B1K70CH0-CH9E4 memory module is a component designed for server-grade computing environments. It utilizes DDR3 technology, which was a standard for high-performance computing before the advent of DDR4, offering a significant improvement in bandwidth and efficiency over previous generations. The module is a Registered DIMM (RDIMM), meaning it includes a register chip that buffers command and address signals. This reduces the electrical load on the memory controller, allowing for greater memory capacity and improved system stability, particularly in systems populated with a large number of memory modules. The 2Rx4 configuration indicates it is dual-rank with four data bits per DRAM chip, optimizing data access patterns. With a clock speed of 1333MHz and a CAS Latency of CL9, this 8GB module provides a solid performance profile for a wide range of server applications, including virtualization, database management, and enterprise resource planning (ERP) systems. Its ECC (Error-Correcting Code) capability ensures data integrity by detecting and correcting single-bit errors, which is critical for mission-critical operations.
