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Samsung M393B1G73EB0-YK0Q2 8GB DDR3-1600MHz RDIMM 2Rx8 CL11 Memory

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Samsung M393B1G73EB0-YK0Q2 8GB DDR3-1600MHz RDIMM 2Rx8 CL11 Memory

SKU M393B1G73EB0-YK0Q2
Brand Samsung
  • Capacity: 8GB
  • Type: DDR3 SDRAM
  • Form Factor: RDIMM (Registered DIMM)
  • Speed: PC3-12800 (1600MHz)
  • Rank: 2Rx8 (Dual Rank x8)
  • Latency: CL11
  • Voltage: 1.5V
  • ECC: Yes (Error-Correcting Code)
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Key specifications

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Memory Size
8GB
Memory Type
DDR3 SDRAM
Form Factor
RDIMM
Speed
1600MHz
CAS Latency
CL11
Rank
2Rx8

Product details

The Samsung M393B1G73EB0-YK0Q2 is a high-performance 8GB DDR3 Registered DIMM (RDIMM) memory module. It operates at a speed of 1600MHz and features a 2Rx8 configuration with CL11 latency, making it suitable for demanding server and workstation applications.

Technical Information

Memory Size8GB
Memory TypeDDR3 SDRAM
Form FactorRDIMM
Speed1600MHz

Additional Specifications

CAS LatencyCL11
Rank2Rx8
Voltage1.5V
ECCRegistered

Description

This Samsung memory module, identified by the SKU M393B1G73EB0-YK0Q2, is engineered for reliability and performance in enterprise environments. Its 8GB capacity provides ample space for complex applications and large datasets, while the DDR3 technology ensures efficient data transfer. The module's RDIMM configuration offers enhanced stability and scalability for multi-processor systems by incorporating a register to buffer command and address signals. The 2Rx8 organization signifies dual-rank operation with x8 data width per rank, optimizing memory bandwidth and performance. This design is crucial for servers and workstations that require robust memory subsystems. With a clock speed of 1600MHz (PC3-12800) and a CAS latency of CL11, this module delivers fast response times for memory-intensive tasks. The inclusion of ECC (Error-Correcting Code) functionality is paramount for data integrity, automatically detecting and correcting single-bit errors, thereby minimizing downtime and ensuring the accuracy of critical operations in server environments.

Condition: Refurbished

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