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Samsung M393B1G70BH0-CMA 8GB DDR3-1866MHz RDIMM 1Rx4 CL13 Memory
- Capacity: 8GB
- Memory Type: DDR3 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 1866MHz (PC3-14900)
- Rank: 1Rank x 4 Bits (1Rx4)
- CAS Latency: CL13
- Voltage: 1.5V
- ECC: Yes (Error-Correcting Code)
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Product Overview
The Samsung M393B1G70BH0-CMA is an 8GB DDR3 Registered DIMM (RDIMM) memory module, operating at 1866MHz with a CAS Latency of 13. It is designed for servers and workstations requiring reliable and efficient memory performance.
Technical Information
| Manufacturer | Samsung |
| Part Number | M393B1G70BH0-CMA |
| Memory Size | 8GB |
| Memory Technology | DDR3 SDRAM |
| Module Type | RDIMM |
Additional Specifications
| Speed Rating | 1866MHz |
| CAS Latency | 13 |
| Rank Configuration | 1Rx4 |
| Voltage | 1.5V |
| ECC Support | Yes |
Product Description
This Samsung 8GB DDR3 RDIMM, identified by the part number M393B1G70BH0-CMA, is a crucial component for enhancing the performance and stability of server and workstation systems. With its 8GB capacity, it provides ample memory for running multiple applications simultaneously, managing databases, and supporting virtualization environments. The DDR3 technology ensures efficient data processing and communication between the CPU and memory, contributing to overall system responsiveness. The module operates at a high frequency of 1866MHz, offering a significant data transfer rate (PC3-14900) that is vital for applications demanding quick access to large amounts of data. As a Registered DIMM (RDIMM), it includes an onboard register that buffers address and command signals, thereby reducing the electrical load on the memory controller. This feature is particularly beneficial for systems with multiple memory modules installed, promoting greater stability and allowing for higher memory configurations. The 1Rx4 rank configuration indicates a single rank with four data bits per DRAM chip, offering a good balance of density and performance for many server applications. Coupled with a CAS Latency (CL) of 13, which is optimized for its operating speed, this memory module ensures efficient operation. Furthermore, its ECC (Error-Correcting Code) capability is essential for maintaining data integrity by detecting and correcting memory errors, a critical requirement for mission-critical server operations and preventing data corruption.
