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Samsung M393B1G70BH0-CMA 8GB DDR3-1866MHz RDIMM 1Rx4 CL13 Memory

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Samsung M393B1G70BH0-CMA 8GB DDR3-1866MHz RDIMM 1Rx4 CL13 Memory

SKU M393B1G70BH0-CMA
Brand Samsung
  • Capacity: 8GB
  • Memory Type: DDR3 SDRAM
  • Form Factor: RDIMM (Registered DIMM)
  • Speed: 1866MHz (PC3-14900)
  • Rank: 1Rank x 4 Bits (1Rx4)
  • CAS Latency: CL13
  • Voltage: 1.5V
  • ECC: Yes (Error-Correcting Code)
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Key specifications

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Manufacturer
Samsung
Part Number
M393B1G70BH0-CMA
Memory Size
8GB
Memory Technology
DDR3 SDRAM
Module Type
RDIMM
Speed Rating
1866MHz

Product details

The Samsung M393B1G70BH0-CMA is an 8GB DDR3 Registered DIMM (RDIMM) memory module, operating at 1866MHz with a CAS Latency of 13. It is designed for servers and workstations requiring reliable and efficient memory performance.

Technical Information

ManufacturerSamsung
Part NumberM393B1G70BH0-CMA
Memory Size8GB
Memory TechnologyDDR3 SDRAM
Module TypeRDIMM

Additional Specifications

Speed Rating1866MHz
CAS Latency13
Rank Configuration1Rx4
Voltage1.5V
ECC SupportYes

Description

This Samsung 8GB DDR3 RDIMM, identified by the part number M393B1G70BH0-CMA, is a crucial component for enhancing the performance and stability of server and workstation systems. With its 8GB capacity, it provides ample memory for running multiple applications simultaneously, managing databases, and supporting virtualization environments. The DDR3 technology ensures efficient data processing and communication between the CPU and memory, contributing to overall system responsiveness. The module operates at a high frequency of 1866MHz, offering a significant data transfer rate (PC3-14900) that is vital for applications demanding quick access to large amounts of data. As a Registered DIMM (RDIMM), it includes an onboard register that buffers address and command signals, thereby reducing the electrical load on the memory controller. This feature is particularly beneficial for systems with multiple memory modules installed, promoting greater stability and allowing for higher memory configurations. The 1Rx4 rank configuration indicates a single rank with four data bits per DRAM chip, offering a good balance of density and performance for many server applications. Coupled with a CAS Latency (CL) of 13, which is optimized for its operating speed, this memory module ensures efficient operation. Furthermore, its ECC (Error-Correcting Code) capability is essential for maintaining data integrity by detecting and correcting memory errors, a critical requirement for mission-critical server operations and preventing data corruption.

Condition: Refurbished

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