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Samsung M393ABG40M52-CYFC0 256GB DDR4-2933MHz RDIMM 8Rx4 CL21 Memory
- Capacity: 256GB
- Type: DDR4 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 2933MHz (PC4-23466)
- Rank: 8Rx4 (Octal Rank x4)
- Latency: CL21
- ECC: Yes (Error-Correcting Code)
- Voltage: 1.2V
- Designed for high-performance servers and memory-intensive workloads
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Product Overview
The Samsung M393ABG40M52-CYFC0 is a high-capacity 256GB DDR4 RDIMM memory module. It operates at 2933MHz with an 8Rx4 configuration and CL21 latency, designed for demanding enterprise server applications.
Technical Information
| Memory Size | 256GB |
| Memory Type | DDR4 SDRAM |
| Form Factor | RDIMM |
| Speed | 2933MHz |
| Rank | 8Rx4 |
Additional Specifications
| CAS Latency | CL21 |
| ECC | Yes |
| Brand | Samsung |
| Part Number | M393ABG40M52-CYFC0 |
Product Description
The Samsung M393ABG40M52-CYFC0 is a substantial 256GB DDR4 Registered DIMM (RDIMM), engineered for the most demanding enterprise server applications. This module operates at a high frequency of 2933MHz, providing exceptional memory bandwidth crucial for memory-intensive tasks. The unique 8Rx4 configuration signifies an octal-rank design with x4 data width per rank, which is typically found in high-density server memory solutions and can offer significant performance advantages by increasing the number of memory banks accessible by the memory controller. This RDIMM includes Error-Correcting Code (ECC) technology, which is indispensable for server environments where data integrity and system stability are paramount. ECC memory automatically detects and corrects single-bit errors, preventing potential system crashes and data corruption. The CAS Latency (CL) of 21 at 2933MHz is optimized for high-performance computing scenarios. With a standard operating voltage of 1.2V, this DDR4 module offers a balance of performance and power efficiency. The M393ABG40M52-CYFC0 is an ideal choice for servers running large-scale virtualization, in-memory databases, big data analytics, and other applications that require massive amounts of fast, reliable, and error-corrected memory.
